垂直 III-V 纳米线隧道场效应晶体管的源设计

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Gautham Rangasamy;Zhongyunshen Zhu;Lars-Erik Wernersson
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引用次数: 0

摘要

我们系统地制造了垂直 InAs/(In)GaAsSb 纳米线隧道场效应晶体管 (TFET) 器件并分析了相关数据,以研究源掺杂剂位置和水平对其器件性能的影响。结果表明,由于形成了 nid-InAsSb 段,在 GaAsSb 源段中进一步延迟引入掺杂剂可改善晶体管的指标(亚阈值摆幅(SS)和导通电流性能)。在 300 mV 的 $V_{text {DS}}$条件下,器件的最小 SS 值为 26 mV/dec,导通电流为 10.2 ~\mu \text{A}/\mu \text{m}$。通过优化掺杂水平,器件的性能得到了进一步提高,在 500 mV 时,器件的过热电流达到了创纪录的 1.2 ~\mu \text{A}/\mu\text{m}$,电导率达到了 205 ~\mu \text{S}/\mu \text{m}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors
We systematically fabricate devices and analyze data for vertical InAs/(In)GaAsSb nanowire tunnel field-effect transistors (TFETs), to study the influence of source dopant position and level on their device performance. The results show that delaying the introduction of dopants further in the GaAsSb source segments improved the transistor metrics (subthreshold swing (SS) and the on-current performance), due to the formation of a nid-InAsSb segment. The devices display a minimum SS of 26 mV/dec and on-current of $10.2 ~\mu \text{A}/\mu \text{m}$ at $V_{\text {DS}}$ of 300 mV. The performance of devices were improved further by optimizing the doping levels which led to record subthermal current of $1.2 ~\mu \text{A}/\mu \text{m}$ and transconductance of $205 ~\mu \text{S}/\mu \text{m}$ at $V_{\text {DS}}$ of 500 mV.
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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