具有事件检测能力的 180 纳米光伏能量收集器/图像传感器平台

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-01-12 DOI:10.1109/LSSC.2024.3353381

D. Zagouri;A. Rimer;E. Emanovic;Y. Ninio;Y. Slezak;D. Jurisic;A. Fish;J. Shor

{"title":"具有事件检测能力的 180 纳米光伏能量收集器/图像传感器平台","authors":"D. Zagouri;A. Rimer;E. Emanovic;Y. Ninio;Y. Slezak;D. Jurisic;A. Fish;J. Shor","doi":"10.1109/LSSC.2024.3353381","DOIUrl":null,"url":null,"abstract":"Photodiodes can be utilized for both image sensing and energy harvesting, but at opposite polarity. There have been numerous research works which have attempted a self-powered imager, by flipping the diodes and harvesting. However, the integration cycle in the image sensing(IS) process is very long and the chip cannot harvest while in this mode. In this letter, an event detector (ED) function is demonstrated in 180 nm, whereby the voltage across the photodiode is monitored during harvesting. If there is a significant change in this voltage, then an event is detected, and the chip can take a picture. Two types of EDs are proposed, which can function at average power as low as 0.2–\n<inline-formula> <tex-math>$1 ~\\mu \\text{W}$ </tex-math></inline-formula>\n.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"62-65"},"PeriodicalIF":2.2000,"publicationDate":"2024-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Photovoltaic Energy Harvester/Image Sensor Platform With Event Detection Capability in 180 nm\",\"authors\":\"D. Zagouri;A. Rimer;E. Emanovic;Y. Ninio;Y. Slezak;D. Jurisic;A. Fish;J. Shor\",\"doi\":\"10.1109/LSSC.2024.3353381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photodiodes can be utilized for both image sensing and energy harvesting, but at opposite polarity. There have been numerous research works which have attempted a self-powered imager, by flipping the diodes and harvesting. However, the integration cycle in the image sensing(IS) process is very long and the chip cannot harvest while in this mode. In this letter, an event detector (ED) function is demonstrated in 180 nm, whereby the voltage across the photodiode is monitored during harvesting. If there is a significant change in this voltage, then an event is detected, and the chip can take a picture. Two types of EDs are proposed, which can function at average power as low as 0.2–\\n<inline-formula> <tex-math>$1 ~\\\\mu \\\\text{W}$ </tex-math></inline-formula>\\n.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"62-65\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-01-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10398473/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10398473/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}

引用次数: 0

摘要

光电二极管可用于图像传感和能量收集，但极性相反。已有许多研究工作尝试通过翻转二极管和收集能量来实现自供电成像仪。然而，图像传感（IS）过程的集成周期很长，芯片无法在这种模式下进行能量收集。在这封信中，我们展示了一种 180 纳米的事件检测器（ED）功能，即在采集过程中监测光电二极管两端的电压。如果该电压发生显著变化，就能检测到事件，芯片就能拍照。本文提出了两种类型的 ED，它们可以在平均功率低至 0.2- $1 ~\mu \text{W}$ 的情况下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Photovoltaic Energy Harvester/Image Sensor Platform With Event Detection Capability in 180 nm

Photodiodes can be utilized for both image sensing and energy harvesting, but at opposite polarity. There have been numerous research works which have attempted a self-powered imager, by flipping the diodes and harvesting. However, the integration cycle in the image sensing(IS) process is very long and the chip cannot harvest while in this mode. In this letter, an event detector (ED) function is demonstrated in 180 nm, whereby the voltage across the photodiode is monitored during harvesting. If there is a significant change in this voltage, then an event is detected, and the chip can take a picture. Two types of EDs are proposed, which can function at average power as low as 0.2–

$1 ~\mu \text{W}$

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量