通过多指 MOS 结构中的导纳测量表征氧化铟镓锌薄膜中的陷阱密度

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-02-01 DOI:10.1016/j.sse.2024.108866

Hongwei Tang , Attilio Belmonte , Dennis Lin , Valeri Afanas'ev , Patrick Verdonck , Adrian Chasin , Harold Dekkers , Romain Delhougne , Jan Van Houdt , Gouri Sankar Kar

{"title":"通过多指 MOS 结构中的导纳测量表征氧化铟镓锌薄膜中的陷阱密度","authors":"Hongwei Tang , Attilio Belmonte , Dennis Lin , Valeri Afanas'ev , Patrick Verdonck , Adrian Chasin , Harold Dekkers , Romain Delhougne , Jan Van Houdt , Gouri Sankar Kar","doi":"10.1016/j.sse.2024.108866","DOIUrl":null,"url":null,"abstract":"<div><p>We perform trap density (D<sub>t</sub>) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (L<sub>ch</sub>) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures\",\"authors\":\"Hongwei Tang , Attilio Belmonte , Dennis Lin , Valeri Afanas'ev , Patrick Verdonck , Adrian Chasin , Harold Dekkers , Romain Delhougne , Jan Van Houdt , Gouri Sankar Kar\",\"doi\":\"10.1016/j.sse.2024.108866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We perform trap density (D<sub>t</sub>) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (L<sub>ch</sub>) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000157\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000157","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

我们利用多指 MOS 结构，通过对非晶铟镓锌氧化物（a-IGZO）薄膜进行导纳测量来提取陷阱密度（Dt）。我们研究了沟道长度 (Lch) 对 C-V 和 G-V 特性的影响，并在短沟道器件中演示了一种可靠的陷阱密度提取方法。该方法针对纯 a-IGZO 和掺镁 a-IGZO (Mg:IGZO)进行了验证。实验结果与基于分布式网络模型的模拟结果一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

We perform trap density (D_t) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (L_ch) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.