通过多指 MOS 结构中的导纳测量表征氧化铟镓锌薄膜中的陷阱密度

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hongwei Tang , Attilio Belmonte , Dennis Lin , Valeri Afanas'ev , Patrick Verdonck , Adrian Chasin , Harold Dekkers , Romain Delhougne , Jan Van Houdt , Gouri Sankar Kar
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引用次数: 0

摘要

我们利用多指 MOS 结构,通过对非晶铟镓锌氧化物(a-IGZO)薄膜进行导纳测量来提取陷阱密度(Dt)。我们研究了沟道长度 (Lch) 对 C-V 和 G-V 特性的影响,并在短沟道器件中演示了一种可靠的陷阱密度提取方法。该方法针对纯 a-IGZO 和掺镁 a-IGZO (Mg:IGZO)进行了验证。实验结果与基于分布式网络模型的模拟结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures

We perform trap density (Dt) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (Lch) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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