预调节欧姆 p-GaN 功率 HEMT 以实现可重现的 Vth 测量

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
L. Ghizzo , D. Trémouilles , F. Richardeau , G. Guibaud
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引用次数: 0

摘要

在 GaN HEMT 可靠性研究中,阈值电压(Vth)的波动给监测电漂移带来了挑战。虽然欧姆 p-GaN 等技术可以减小 Vth 波动,但可恢复的电荷捕获问题依然存在。因此,在进行可靠性研究时,采用新颖的表征方法至关重要,以便测量内在变化,而不是即使在非降级晶体管中也存在的电荷捕获效应。本文阐述的一种方法可以可靠、可复制地测量欧姆 p-GaN 栅极 HEMT GaN 的 Vth。在阈值电压测量之前,会立即引入一个专用的栅极偏置曲线,以稳定测量结果。这一预处理阶段需要负偏置电压和适当的高电压才能有效。事实证明,引入的新协议也适用于其他 HEMT GaN 结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

The fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs. While technologies, such as ohmic p-GaN, may lessen Vth fluctuations, the issue of recoverable charge trapping still remains. Therefore, it is crucial to adopt novel characterization methods when conducting reliability studies, in order to measure intrinsic changes rather than the charge-trapping effects that exist even in non-degraded transistors. One method expounded in this paper allows for a reliable and replicable measurement of Vth for an ohmic p-GaN gate HEMT GaN. A dedicated gate-bias profile is introduced immediately prior to the threshold-voltage measurement to stabilize it. This preconditioning phase necessitates a negative bias voltage followed by a suitably high voltage to be effective. The novel protocol introduced is also shown to be applicable to other HEMT GaN structures.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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