栅源/漏极重叠对 FeFET 的影响

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Changha Kim , Dong-Oh Kim , Woo Young Choi
{"title":"栅源/漏极重叠对 FeFET 的影响","authors":"Changha Kim ,&nbsp;Dong-Oh Kim ,&nbsp;Woo Young Choi","doi":"10.1016/j.sse.2024.108862","DOIUrl":null,"url":null,"abstract":"<div><p>The influences of gate-source/drain overlap on ferroelectric field-effect transistors (FeFETs) are investigated with various gate-source/drain overlap lengths (<em>L</em><sub>ov</sub>’s) and doping concentrations of the gate-source/drain overlap region (<em>D</em><sub>ov</sub>’s). In contrast to conventional metal-ferroelectric-insulator-semiconductor (MFIS) FeFETs, a metal layer between a ferroelectric and an insulator layer allows overlap capacitance to affect the entire ferroelectric layer in metal-ferroelectric-metal–insulator-semiconductor (MFMIS) FeFETs. As <em>L</em><sub>ov</sub> and <em>D</em><sub>ov</sub> increase, the effective channel length of both FeFETs decreases. In the case of MFMIS FeFETs, the gate-to-source/drain overlap capacitance (<em>C</em><sub>ov,gate-S/D</sub>) increases, leading to a larger voltage drop across the ferroelectric layer. According to the simulation results, MFMIS FeFETs show a wider memory window (MW) and larger sensing margin than MFIS FeFETs.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of gate-source/drain overlap on FeFETs\",\"authors\":\"Changha Kim ,&nbsp;Dong-Oh Kim ,&nbsp;Woo Young Choi\",\"doi\":\"10.1016/j.sse.2024.108862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The influences of gate-source/drain overlap on ferroelectric field-effect transistors (FeFETs) are investigated with various gate-source/drain overlap lengths (<em>L</em><sub>ov</sub>’s) and doping concentrations of the gate-source/drain overlap region (<em>D</em><sub>ov</sub>’s). In contrast to conventional metal-ferroelectric-insulator-semiconductor (MFIS) FeFETs, a metal layer between a ferroelectric and an insulator layer allows overlap capacitance to affect the entire ferroelectric layer in metal-ferroelectric-metal–insulator-semiconductor (MFMIS) FeFETs. As <em>L</em><sub>ov</sub> and <em>D</em><sub>ov</sub> increase, the effective channel length of both FeFETs decreases. In the case of MFMIS FeFETs, the gate-to-source/drain overlap capacitance (<em>C</em><sub>ov,gate-S/D</sub>) increases, leading to a larger voltage drop across the ferroelectric layer. According to the simulation results, MFMIS FeFETs show a wider memory window (MW) and larger sensing margin than MFIS FeFETs.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S003811012400011X\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S003811012400011X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

本研究采用不同的栅源/漏极重叠长度(Lov's)和栅源/漏极重叠区的掺杂浓度(Dov's),研究了栅源/漏极重叠对铁电场效应晶体管(FeFET)的影响。与传统的金属-铁电-绝缘体-半导体 (MFIS) FeFET 不同,铁电层和绝缘体层之间的金属层允许重叠电容影响金属-铁电-金属-绝缘体-半导体 (MFMIS) FeFET 中的整个铁电层。随着 Lov 和 Dov 的增加,这两种 FeFET 的有效沟道长度都会减小。对于 MFMIS FeFET,栅极到源极/漏极的重叠电容(Cov,gate-S/D)会增加,导致铁电层上的压降增大。根据仿真结果,与 MFIS FeFET 相比,MFMIS FeFET 具有更宽的存储窗口 (MW) 和更大的传感裕度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of gate-source/drain overlap on FeFETs

The influences of gate-source/drain overlap on ferroelectric field-effect transistors (FeFETs) are investigated with various gate-source/drain overlap lengths (Lov’s) and doping concentrations of the gate-source/drain overlap region (Dov’s). In contrast to conventional metal-ferroelectric-insulator-semiconductor (MFIS) FeFETs, a metal layer between a ferroelectric and an insulator layer allows overlap capacitance to affect the entire ferroelectric layer in metal-ferroelectric-metal–insulator-semiconductor (MFMIS) FeFETs. As Lov and Dov increase, the effective channel length of both FeFETs decreases. In the case of MFMIS FeFETs, the gate-to-source/drain overlap capacitance (Cov,gate-S/D) increases, leading to a larger voltage drop across the ferroelectric layer. According to the simulation results, MFMIS FeFETs show a wider memory window (MW) and larger sensing margin than MFIS FeFETs.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信