Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu
{"title":"通过成型气体退火提高 InAlN/GaN 高电子迁移率晶体管的电气性能","authors":"Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu","doi":"10.1016/j.sse.2024.108861","DOIUrl":null,"url":null,"abstract":"<div><p>The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H<sub>2</sub>/N<sub>2</sub> annealing whereby the amount of Ga–O bonds is decreased. Compared with N<sub>2</sub> annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (<em>f</em><sub>T</sub>/<em>f</em><sub>max</sub>) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"213 ","pages":"Article 108861"},"PeriodicalIF":1.4000,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing\",\"authors\":\"Siheng Chen , Peng Cui , Handoko Linewih , Kuan Yew Cheong , Mingsheng Xu , Xin Luo , Liu Wang , Jiuji Sun , Jiacheng Dai , Jisheng Han , Xiangang Xu\",\"doi\":\"10.1016/j.sse.2024.108861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H<sub>2</sub>/N<sub>2</sub> annealing whereby the amount of Ga–O bonds is decreased. Compared with N<sub>2</sub> annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (<em>f</em><sub>T</sub>/<em>f</em><sub>max</sub>) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"213 \",\"pages\":\"Article 108861\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-01-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000108\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000108","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
The surface electronic states and defects of gallium nitride based high-electron-mobility transistors (HEMTs) play a critical role affecting channel electron density, electron mobility, leakage current, radio frequency (RF) power output and power added efficiency of devices. This article demonstrates the improved surface properties of InAlN/GaN HEMTs through forming gas (FG) annealing, resulting in a significantly improved electrical properties. The X-ray photoelectron spectra reveals a reduction of surface native oxide after FG H2/N2 annealing whereby the amount of Ga–O bonds is decreased. Compared with N2 annealing, an on-resistance of 1.68 Ω·mm, a subthreshold swing of 118 mV/dec, a transconductance peak of 513 mS/mm, a gate diode breakdown voltage of surpassing 42 V, and a high current/power gain cutoff frequency (fT/fmax) of 165/165 GHz are achieved by the 50-nm InAlN/GaN HEMT on Si substrate.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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