基于电压斜坡应力的 2.5d mimcaps 高级掺铝 hfo2 介电寿命预测模型

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-01-15 DOI:10.1016/j.sse.2024.108864

Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev

{"title":"基于电压斜坡应力的 2.5d mimcaps 高级掺铝 hfo2 介电寿命预测模型","authors":"Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev","doi":"10.1016/j.sse.2024.108864","DOIUrl":null,"url":null,"abstract":"<div>The reliability of an Al-doped HfO<math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math> dielectric used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high-<math><mi>κ</mi></math> material at high fields.</div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs\",\"authors\":\"Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev\",\"doi\":\"10.1016/j.sse.2024.108864\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>The reliability of an Al-doped HfO<math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math> dielectric used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high-<math><mi>κ</mi></math> material at high fields.</div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-01-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000133\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000133","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

通过恒压应力（CVS）和电压斜坡应力（VRS）测量，研究了用于高密度 2.5D MIMCAP 的掺铝 HfO2 介电材料的可靠性。两种技术得出的结果非常吻合，因此可以根据击穿特性提出寿命预测模型。提取的活化能显示出电压依赖性，这与高κ材料在高电场下的降解特性变化有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs

The reliability of an Al-doped HfO $_{2}$ dielectric used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high- $κ$ material at high fields.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.