基于模拟的方法分析边缘长度对曲线光罩精度的影响

Kushlendra Mishra, Rachit Sharma, Ingo Bork, Mary Zuo, Christof Zillner
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引用次数: 0

摘要

虽然 ILT 生成的曲线掩膜形状改善了晶圆光刻工艺窗口,但掩膜数据准备步骤和 MBMW 数据路径的效率取决于用于表示复杂曲线形状的边的数量。事实证明,形状简化方法可有效减少用于表示曲线光罩数据的边缘数量。在本文中,我们介绍了一种分析边缘长度变化对曲线光罩精度影响的方法,该方法可作为给定光罩工艺中基于边缘表示曲线形状的实用指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A simulation-based methodology to analyze the impact of edge-length on curvilinear mask accuracy
While the curvilinear mask shapes generated by ILT improve the wafer lithography process window, the efficiency of mask data preparation steps and the MBMW data-path depends on the number of edges used to represent complex curvilinear shapes. Shape simplification methods have been shown to be effective in reducing the number of edges used to represent curvilinear mask data. In this paper, we present the development of an approach to analyze the impact of edge-length variation on curvilinear mask accuracy, which can be used as a practical guidance for edge-based representation of curvilinear shapes for a given mask process.
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