利用 0.1 μm GaAs pHEMT 技术实现 W 波段双频低噪声放大器的高 Q 变压器中和技术

IF 1.6 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of electromagnetic engineering and science Pub Date : 2023-11-30 DOI:10.26866/jees.2023.6.r.193

Taejoo Sim, Dong-min Lee, Wansik Kim, Ki-Choul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim

{"title":"利用 0.1 μm GaAs pHEMT 技术实现 W 波段双频低噪声放大器的高 Q 变压器中和技术","authors":"Taejoo Sim, Dong-min Lee, Wansik Kim, Ki-Choul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim","doi":"10.26866/jees.2023.6.r.193","DOIUrl":null,"url":null,"abstract":"In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.","PeriodicalId":15662,"journal":{"name":"Journal of electromagnetic engineering and science","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology\",\"authors\":\"Taejoo Sim, Dong-min Lee, Wansik Kim, Ki-Choul Kim, Jeung Won Choi, Min-Su Kim, Junghyun Kim\",\"doi\":\"10.26866/jees.2023.6.r.193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.\",\"PeriodicalId\":15662,\"journal\":{\"name\":\"Journal of electromagnetic engineering and science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of electromagnetic engineering and science\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.26866/jees.2023.6.r.193\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of electromagnetic engineering and science","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.26866/jees.2023.6.r.193","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在这项研究中，通过在 W 波段应用基于变压器的中和技术，实现了双波段低噪声放大器（LNA）。由于 W 波段的性能下降，采用中和技术非常困难。然而，由于对基于变压器的中和网络进行了布局优化，电路性能得到了提高，而且在 W 波段的运行情况也得到了证实。中和技术在 0.1 微米砷化镓（GaAs）拟态高电子迁移率晶体管单片微波集成电路低噪声放大器上分四个阶段实现。LNA 的小信号增益分别为 20.3 dB 和 21.7 dB，噪声系数分别为 5.0 dB 和 6.4 dB（频率分别为 84 GHz 和 96 GHz），1 V 电源功耗为 46 mW。

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High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology

In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.

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来源期刊

Journal of electromagnetic engineering and science ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

2.90

自引率

17.40%

发文量

审稿时长

10 weeks

期刊介绍： The Journal of Electromagnetic Engineering and Science (JEES) is an official English-language journal of the Korean Institute of Electromagnetic and Science (KIEES). This journal was launched in 2001 and has been published quarterly since 2003. It is currently registered with the National Research Foundation of Korea and also indexed in Scopus, CrossRef and EBSCO, DOI/Crossref, Google Scholar and Web of Science Core Collection as Emerging Sources Citation Index(ESCI) Journal. The objective of JEES is to publish academic as well as industrial research results and discoveries in electromagnetic engineering and science. The particular scope of the journal includes electromagnetic field theory and its applications: High frequency components, circuits, and systems, Antennas, smart phones, and radars, Electromagnetic wave environments, Relevant industrial developments.