基于 Temkin 吸附模型的钨酸铋纳米片传感器用于检测三乙胺

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhongyuan Wu , Fengyu Luo , Xiaohong Zheng , Jin Liu
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引用次数: 0

摘要

采用水热法合成了纳米结构的 Bi2WO6 和 Bi2W2O9。分别通过 X 射线衍射、扫描电子显微镜、Brunauer-Emmett-Teller 和 X 射线光电子能谱(XPS)分析了晶体结构、形貌和比表面积。表征结果表明,与 Bi2W2O9 相比,Bi2WO6 具有更高的比表面积和更大的孔径,这有利于氧气的吸附和表面反应。气敏测试表明,这两种传感器的检测限均较低,为 2.5 ppm,而且检测三乙胺(TEA)的响应时间和恢复时间都很短。它们在 180°C 下的循环和长期稳定性也很好,表现出卓越的气体传感性能。与 Bi2W2O9 传感器相比,Bi2WO6 传感器具有更高的响应和灵敏度,以及更好的选择性,这与前一种材料的均匀分层结构有关。我们分析了这些传感器检测三乙醇胺的机理,并使用 Temkin 吸附模型来解释这种线性关系。我们发现,该模型为拟合这些半导体传感器的工作曲线提供了很好的理论基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection

Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection

Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection

Nanostructured Bi2WO6 and Bi2W2O9 were synthesized using a hydrothermal method. The crystal structure, morphology, and specific surface area were analyzed via X-ray diffraction, scanning electron microscopy, Brunauer–Emmett–Teller and X-ray photoelectron spectroscopy (XPS) analysis, respectively. The characterization results show that Bi2WO6 has a higher specific surface area and a larger pore size than Bi2W2O9, which promote oxygen adsorption and surface reactions. Gas-sensitive tests show that both sensors have a lower detection limit of 2.5 ppm as well as short response and recovery times for detecting triethylamine (TEA). They also have excellent cycling and long-term stability at 180 °C and exhibit excellent gas-sensing performance. The Bi2WO6 sensor has a higher response and sensitivity, as well as better selectivity, than the Bi2W2O9 sensor, which is related to the uniformly layered structure of the former material. We have analyzed the mechanism that enables these sensors to detect TEA and have used the Temkin adsorption model to explain the linear relationship. We find that this model provides an excellent theoretical foundation for fitting the working curve of these semiconductor sensors.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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