具有低开关损耗和反向恢复损耗的新型 650 V 无回扣 PMOS-RC-SJBT

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-12-19 DOI:10.1088/1361-6641/ad112f

Yuanzhen Yang, Luping Li, Zehong Li, Qianshen Rao, Peng Chen, Min Ren

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引用次数: 0

摘要

本文提出并研究了一种具有低开关和反向恢复损耗的新型 650 V 无瞬态反向导电超级结（SJ）绝缘栅双极晶体管（RC-SJBT）。其中，SJ 柱充当漂移区，而 PMOS 和肖特基则结合在阴极侧。在 SJ 柱的作用下，快返被有效抑制，IGBT 的 Von-Eoff 权衡也得到了改善。PMOS 和肖特基组合结构增强了 IGBT 的导通载流子，同时降低了飞轮二极管反向恢复时的空穴注入效率，从而在不影响 IGBT 性能的情况下降低了 PMOS-RC-SJBT 的反向恢复开关损耗（Erec）。通过 TCAD 工具研究发现，PMOS-RC-SJBT 的总开关损耗比 Con.RC-IGBT 降低了 51.2%，比英飞凌最新的商用 RC-IGBT IKWH30N65WR6 降低了 40.6%。此外，tsc 比 RC-SJBT 增加了 35.3%。此外，无回扣 P 集电极宽度从 Con.RC-IGBT 的 340 µm 减小到 PMOS-RC-SJBT 的 40 µm，电流均匀性大幅提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

A novel 650 V Snapback-free Reverse-conducting Super-junction (SJ) insulated gate bipolar transistor (RC-SJBT) with low switching and reverse recovery loss is proposed and investigated in paper. In where, SJ pillar acts as the drift region, meanwhile PMOS and Schottky are combined on the cathode side. Under the action of SJ pillar, the snapback is effectively suppressed and

Von

−

Eoff

trade-off of IGBT is also improved. The PMOS and Schottky combined structure enhances on-state carriers of IGBT meanwhile reduces hole injection efficiency during reverse recovery of freewheel diode, thus the reverse recovery switching loss (

Erec

) of PMOS-RC-SJBT is reduced without sacrificing IGBT’s performance. Investigated by the TCAD tools, the total switching loss of PMOS-RC-SJBT is reduced by 51.2% from Con. RC-IGBT and 40.6% than the latest commercial RC-IGBT IKWH30N65WR6 of Infineon. Besides that,

tsc

is increased by 35.3% than RC-SJBT. Additionally, the snapback-free P-collector width is reduced from 340 µm of Con.RC-IGBT to 40 µm of PMOS-RC-SJBT, where the current uniformity is substantially improved.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.