采用 12 英寸晶圆级封装方法制造的带连续接地壁的 3D 同轴转换器,用于射频应用

IF 1.7 4区 材料科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Xinran Zhao, Yingying Pang, Gang Wang, Chenhui Xia, Yuan Yuan, Chengqian Wang
{"title":"采用 12 英寸晶圆级封装方法制造的带连续接地壁的 3D 同轴转换器,用于射频应用","authors":"Xinran Zhao, Yingying Pang, Gang Wang, Chenhui Xia, Yuan Yuan, Chengqian Wang","doi":"10.1108/ssmt-08-2023-0051","DOIUrl":null,"url":null,"abstract":"<h3>Purpose</h3>\n<p>This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.</p><!--/ Abstract__block -->\n<h3>Design/methodology/approach</h3>\n<p>An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius <em>R</em> of coaxial transition is optimized by designing and fabricating three samples.</p><!--/ Abstract__block -->\n<h3>Findings</h3>\n<p>The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius <em>R</em> of 155 µm exhibits S11 &lt; –10 dB and S21 &gt; –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth.</p><!--/ Abstract__block -->\n<h3>Originality/value</h3>\n<p>The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.</p><!--/ Abstract__block -->","PeriodicalId":49499,"journal":{"name":"Soldering & Surface Mount Technology","volume":"35 1","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications\",\"authors\":\"Xinran Zhao, Yingying Pang, Gang Wang, Chenhui Xia, Yuan Yuan, Chengqian Wang\",\"doi\":\"10.1108/ssmt-08-2023-0051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3>Purpose</h3>\\n<p>This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.</p><!--/ Abstract__block -->\\n<h3>Design/methodology/approach</h3>\\n<p>An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius <em>R</em> of coaxial transition is optimized by designing and fabricating three samples.</p><!--/ Abstract__block -->\\n<h3>Findings</h3>\\n<p>The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius <em>R</em> of 155 µm exhibits S11 &lt; –10 dB and S21 &gt; –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth.</p><!--/ Abstract__block -->\\n<h3>Originality/value</h3>\\n<p>The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.</p><!--/ Abstract__block -->\",\"PeriodicalId\":49499,\"journal\":{\"name\":\"Soldering & Surface Mount Technology\",\"volume\":\"35 1\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2023-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Soldering & Surface Mount Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1108/ssmt-08-2023-0051\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soldering & Surface Mount Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1108/ssmt-08-2023-0051","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

设计/方法/途径 采用先进的封装方法--12 英寸晶圆级模透(TMV)增材制造,制造出具有连续接地壁的三维树脂基同轴过渡层(命名为树脂-同轴过渡层)。为确保应用的普遍性和制造的可行性,我们进行了设计和模拟。通过设计和制造三个样品,对同轴过渡的外半径 R 进行了优化。外半径 R 为 155 µm 的优化样品在 10-110 GHz 频率下显示出 S11 < -10 dB 和 S21 > -1.3 dB,并且是所有样品中插入损耗最小的(77 GHz 频率下 S21 = 0.83 dB)。此外,样品的 S21 在 58.4-90.1 GHz 时会增大,这表明样品具有宽广且合适的工作带宽。制备的树脂同轴转换器在 W 波段表现出良好的性能。它可为新型射频转换器的设计和制造方法提供新的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Purpose

This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.

Design/methodology/approach

An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples.

Findings

The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth.

Originality/value

The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.

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来源期刊
Soldering & Surface Mount Technology
Soldering & Surface Mount Technology 工程技术-材料科学:综合
CiteScore
4.10
自引率
15.00%
发文量
30
审稿时长
>12 weeks
期刊介绍: Soldering & Surface Mount Technology seeks to make an important contribution to the advancement of research and application within the technical body of knowledge and expertise in this vital area. Soldering & Surface Mount Technology compliments its sister publications; Circuit World and Microelectronics International. The journal covers all aspects of SMT from alloys, pastes and fluxes, to reliability and environmental effects, and is currently providing an important dissemination route for new knowledge on lead-free solders and processes. The journal comprises a multidisciplinary study of the key materials and technologies used to assemble state of the art functional electronic devices. The key focus is on assembling devices and interconnecting components via soldering, whilst also embracing a broad range of related approaches.
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