{"title":"MoS2/p-Si 光电二极管的 SPICE 模型","authors":"Feng Li, Shubin Zhang, Yanfeng Jiang","doi":"10.1016/j.sse.2023.108848","DOIUrl":null,"url":null,"abstract":"<div><p><span>Molybdenum disulfide (MoS</span><sub>2</sub><span><span><span><span>) 2D-material is considered as one of potential candidates for next generation optoelectronic devices due to its tunable bandgap, relatively high </span>carrier mobility, and good </span>light absorption, etc. From the perspective of circuit simulation and system verification, an </span>equivalent circuit model of MoS</span><sub>2</sub><span>/p-Si photodiode is required. In the paper, the optical response and the carrier transmission process of MoS</span><sub>2</sub>/p-Si photodiode are analyzed theoretically. A SPICE (Simulation Program with Integrated Circuit Emphasis) equivalent circuit model of MoS<sub>2</sub>/p-Si photodiode is proposed, which can be used to simulate the photoelectric characteristics of the 2D device. Based on the established SPICE model of MoS<sub>2</sub>/p-Si photodiode, the simulation results are consistent with the experimental results of MoS<sub>2</sub>/p-Si photodiode devices. The <em>trans</em>-impedance amplifier (TIA) is designed for MoS<sub>2</sub><span>/p-Si photodiode, and the set-up SPICE model is used to verify the designed TIA circuit. It shows that the SPICE model has potential application for the simulation of the opto-electrical system including the cutting-edge 2-D photo diode.</span></p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SPICE model of MoS2/p-Si photodiode\",\"authors\":\"Feng Li, Shubin Zhang, Yanfeng Jiang\",\"doi\":\"10.1016/j.sse.2023.108848\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span>Molybdenum disulfide (MoS</span><sub>2</sub><span><span><span><span>) 2D-material is considered as one of potential candidates for next generation optoelectronic devices due to its tunable bandgap, relatively high </span>carrier mobility, and good </span>light absorption, etc. From the perspective of circuit simulation and system verification, an </span>equivalent circuit model of MoS</span><sub>2</sub><span>/p-Si photodiode is required. In the paper, the optical response and the carrier transmission process of MoS</span><sub>2</sub>/p-Si photodiode are analyzed theoretically. A SPICE (Simulation Program with Integrated Circuit Emphasis) equivalent circuit model of MoS<sub>2</sub>/p-Si photodiode is proposed, which can be used to simulate the photoelectric characteristics of the 2D device. Based on the established SPICE model of MoS<sub>2</sub>/p-Si photodiode, the simulation results are consistent with the experimental results of MoS<sub>2</sub>/p-Si photodiode devices. The <em>trans</em>-impedance amplifier (TIA) is designed for MoS<sub>2</sub><span>/p-Si photodiode, and the set-up SPICE model is used to verify the designed TIA circuit. It shows that the SPICE model has potential application for the simulation of the opto-electrical system including the cutting-edge 2-D photo diode.</span></p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2023-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110123002617\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110123002617","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Molybdenum disulfide (MoS2) 2D-material is considered as one of potential candidates for next generation optoelectronic devices due to its tunable bandgap, relatively high carrier mobility, and good light absorption, etc. From the perspective of circuit simulation and system verification, an equivalent circuit model of MoS2/p-Si photodiode is required. In the paper, the optical response and the carrier transmission process of MoS2/p-Si photodiode are analyzed theoretically. A SPICE (Simulation Program with Integrated Circuit Emphasis) equivalent circuit model of MoS2/p-Si photodiode is proposed, which can be used to simulate the photoelectric characteristics of the 2D device. Based on the established SPICE model of MoS2/p-Si photodiode, the simulation results are consistent with the experimental results of MoS2/p-Si photodiode devices. The trans-impedance amplifier (TIA) is designed for MoS2/p-Si photodiode, and the set-up SPICE model is used to verify the designed TIA circuit. It shows that the SPICE model has potential application for the simulation of the opto-electrical system including the cutting-edge 2-D photo diode.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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