β-Ga2O3与SiO2和Al2O3波段偏移的取向依赖性

IF 2.4 3区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Journal of Vacuum Science & Technology A Pub Date : 2023-09-22 DOI:10.1116/6.0003039

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton

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引用次数: 0

摘要

β-Ga2O3最常用的两种介质是SiO2和Al2O3，因为它们具有较大的带隙、制备的通用性和热稳定性。然而，由于β-多型的各向异性，有必要了解不同晶体取向下的能带排列差异。利用x射线光电子能谱对β-Ga2O3取向为(001)、(010)和(2¯01)的SiO2/β-Ga2O3和Al2O3/ β-Ga2O3异质结的能带排列进行了比较研究。结果表明，(2¯01)、(001)和(010)取向β-Ga2O3基板的带隙分别为4.64、4.71和4.59 eV。SiO2在这三个取向上的价带偏移分别为1.4、1.4和1.1 eV, Al2O3的价带偏移分别为0.0、0.1和0.2 eV。相应的导带偏移量SiO2为2.59 ~ 3.01 eV, Al2O3为2.26 ~ 2.51 eV。

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β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3

Two of the most common dielectrics for β-Ga2O3 are SiO2 and Al2O3 because of their large bandgaps, versatility of preparation, and thermal stability. However, because of the anisotropic properties of the β-polytype, it is necessary to understand differences in band alignment for the different crystal orientation. Using x-ray photoelectron spectroscopy, we performed a comparative study of the band alignment of SiO2/β-Ga2O3 and Al2O3/ β-Ga2O3 heterojunctions with different β-Ga2O3 orientations of (001), (010), and (2¯01). The bandgaps were determined to be 4.64, 4.71, and 4.59 eV for the (2¯01), (001), and (010) oriented β-Ga2O3 substrates, respectively. The valence band offsets for SiO2 on these three orientations were 1.4, 1.4, and 1.1 eV, respectively, while for Al2O3, the corresponding values were 0.0, 0.1, and 0.2 eV, respectively. The corresponding conduction band offsets ranged from 2.59 to 3.01 eV for SiO2 and 2.26 to 2.51 eV for Al2O3.

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来源期刊

Journal of Vacuum Science & Technology A 工程技术-材料科学：膜

CiteScore

5.10

自引率

10.30%

发文量

247

审稿时长

2.1 months

期刊介绍： Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.