成分梯度InGaN末量子势垒对gan基VCSELs性能增强的模拟

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-10-17 DOI:10.1088/1361-6641/ad03fd

Yachao Wang, Tao Yang, Lei Shi, Yanhui Chen, Yang Mei, Bao-Ping Zhang

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引用次数: 2

摘要

摘要氮化镓(GaN)垂直腔面发射激光器(VCSELs)的有源区电子泄漏降低了内部量子效率，影响了激光器的性能。在这项研究中，我们提出了一种具有梯度铟(In)成分的新型InGaN末量子势垒(LQB)结构，并通过商业软件PICS3D对器件性能进行了模拟。与传统的GaN LQB器件相比，梯度LQB结构大大减少了电子泄漏，提高了空穴注入效率。因此，基于成分梯度InGaN LQB的gan基VCSEL的阈值电流降低了44%，输出功率提高了392%。InGaN的组成梯度也允许我们在外延中增加LQB的厚度，而不会因为LQB的极化降低而降低载流子注入效率。本研究结果表明，InGaN LQB的组成梯度有望实现高性能的gan基VCSELs

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Simulation of performance enhancement of GaN-based VCSELs by composition gradient InGaN last-quantum barrier

Abstract Electron leakage in the active region decreases the internal quantum efficiency and impedes the performance of Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs). In this study, we propose a novel InGaN last-quantum barrier (LQB) structure with gradient Indium (In) composition, and the device performance was simulated by the commercial software PICS3D. Compared with the device with conventional GaN LQB, the electron leakage is greatly reduced and the hole injection efficiency is also improved by the graded LQB structure. Consequently, the threshold current is reduced by 44%, and output power is increased by 392% in GaN-based VCSEL based on composition gradient InGaN LQB. The composition gradient InGaN can also allow us to increase the thickness of the LQB in epitaxy without degrading the carrier injection efficiency due to the reduced polarization in the LQB. The results of this study suggest that the composition gradient InGaN LQB is promising for the realization of high-performance GaN-based VCSELs

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.