半导体晶圆测试用通用数字探针静电计

IF 0.2 Q4 INSTRUMENTS & INSTRUMENTATION
A. L. Zharin, U. A. Mikitsevich, A. I. Svistun, K. U. Pantsialeyeu
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引用次数: 0

摘要

非接触电方法广泛应用于半导体晶圆的研究和控制。这些方法通常基于表面电位测量(CPD),结合照明和/或使用电晕放电在样品上沉积电荷,也基于表面光电动势的测量。利用光电动势(SPV)可以测定少量载流子的寿命、扩散长度和检测表面重金属的痕迹。此外,利用光电动势可以确定板的表面电阻,表面介电层的一些参数和势垒光电动势(JPV)。电气性能结果反映了近表面特性对器件最终性能的影响。这项工作的目的是开发一种通用的数字探头静电计,它实现了各种非接触电方法来分析半导体晶圆,其中工作模式和配置的变化,接收数据的传输,远程测试和校准都是通过数字本地控制通道进行的。本文介绍了笔者研制的一种通用数字探头静电计,实现了上述半导体晶圆分析的非接触电方法(CPD、SPV和JPV),其中工作模式和配置的变化、接收数据的传输、远程测试和校准都是通过数字本地控制通道进行的。由于其速度快,电表征方法适合于在生产过程中检测半导体晶圆。最后给出了在CPD、SPV和JPV模式下探头静电计的测试结果,验证了所提方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Universal Digital Probe Electrometer for Testing Semiconductor Wafers
Non-contact electrical methods are widely used for research and control of semiconductor wafers. The methods are usually based on surface potential measurement (CPD) in combination with illumination and/or deposition of charges on the sample using a corona discharge, and are also based on the measurement of surface photo-emf. By photo-EMF (SPV) it is possible to determine the lifetime of minor charge carriers, their diffusion length and detect traces of heavy metals on the surface. In addition, using photo-EMF it is possible to determine the surface resistance of the plate, some parameters of the dielectric layer on the surface and barrier photo-EMF (JPV). Electrical performance results reflect the influence of near-surface characteristics on the final performance of devices. The aim of the work was to develop a universal digital probe electrometer that implements various non-contact electrical methods for analyzing semiconductor wafers, in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. This paper describes a universal digital probe electrometer developed by the authors, which implements the above-described non-contact electrical methods for analyzing semiconductor wafers (CPD, SPV and JPV), in which the change in operating modes and configuration, transmission of the received data, remote testing and calibration are carried out via digital local control channels. Due to their high speed, electrical characterization methods are suitable for inspecting semiconductor wafers during production. The results of testing the developed probe electrometer in CPD, SPV and JPV modes are presented, which reflect the effectiveness of the proposed approaches.
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来源期刊
Devices and Methods of Measurements
Devices and Methods of Measurements INSTRUMENTS & INSTRUMENTATION-
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25.00%
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审稿时长
8 weeks
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