含氟氧化锡薄膜在玻璃中的失效机理及可靠性试验

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jihee Bae;Hyoungseuk Choi
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引用次数: 0

摘要

氟掺杂氧化锡(FTO)是一种用于太阳能电池和能源装置的透明导电氧化物。在本研究中,通过环境试验和相应的失效分析来确定FTO的失效机制。采用喷雾热解沉积(SPD)法制备了FTO薄膜。环境试验是在高温高湿环境下进行的,类似于现场条件。通过霍尔系数测量、x射线粉末衍射(XRD)分析和场发射扫描电镜(FE-SEM)研究了暴露于测试环境前后的降解行为和破坏机制。测试后观察到FTO样品的载流子浓度和电子迁移率下降。分析结果显示,试验后F浓度降低,导致载流子浓度降低。此外,由于F空位导致晶体的周期性降低,电子迁移率降低。因此,高温和高湿条件显著降低了FTO的耐久性。未来的研究应该考虑F在这种环境中的降解,并确定防止它的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests
Fluorine-doped tin oxide (FTO) is a transparent conductive oxide that is used in solar cells and energy devices. In this study, environmental tests and corresponding failure analyses were conducted to identify the failure mechanisms of FTO. An FTO thin film was prepared via spray pyrolysis deposition (SPD). Environmental tests were conducted in high-temperature and high-humidity environments, similar to field conditions. The degradation behavior and failure mechanisms were investigated using Hall-coefficient measurements, X-ray powder diffraction (XRD) analysis, and field-emission scanning electron microscopy (FE-SEM), before and after exposure to the test environments. A decrease in the carrier concentrations and electron mobilities of the FTO samples was observed after the tests. The analysis of the results revealed a decrease in the F concentration after the tests, resulting in a decrease in the carrier concentration. Moreover, the electron mobility decreased owing to the reduction in periodicity of the crystal attributed to F vacancies. Therefore, high-temperature and high-humidity conditions significantly decreased the durability of FTO. Future studies should consider the degradation of F in such environments and determine ways to prevent it.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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