用于高量子效率可见光发射的超高密度InGaN/GaN纳米金字塔量子点

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS
Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst
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引用次数: 0

摘要

本文报道了利用金属有机化学气相沉积技术在嵌段共聚物(BCP) GaN模板上实现InGaN/GaN纳米晶格量子点(QDs)的选择性区域外延(SAE)。开发了图案转移工艺和SAE工艺,实现了7-9 × 1010 cm−2的超高密度QD形成,特征尺寸为20-35 nm。通过扫描电镜和透射电镜对量子点的生长机理和几何性质进行了研究,发现在半极性{101¯1}平面上生长了InGaN的纳米金字塔量子点结构。采用微光致发光方法研究了纳米金字塔量子点的光学特性。根据生长温度的不同,我们观察到以488和514 nm为中心的量子点发射。发现这些发射比平面量子阱结构的发射波长更长。这可以归因于沿半极平面较高的铟掺入和较大的InGaN厚度的综合影响。此外,我们还发现,随着InGaN层数的增加,QD发射强度增加,但没有波长偏移,这表明在纳米金字塔结构形成后,铟沿半极平面呈恒定的生长速率和掺杂。通过比较量子点在低温和室温下的光致发光强度,估计其内部量子效率在60%以上。从室温到低温,PL发射波长发生了11 nm的蓝移,而半最大全宽度从68 (351 meV)减小到56 nm (303 meV)。通过采用BCP光刻技术和SAE技术,我们成功地实现了超高密度、小尺寸的InGaN/GaN纳米金字塔量子点的可见发射,这可能是量子点发光二极管和/或激光器的潜在活跃区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency
In this study, the selective area epitaxy (SAE) of InGaN/GaN nanopyramid quantum dots (QDs) on a block copolymer patterned (BCP) GaN template using metalorganic chemical vapor deposition is reported. The pattern transfer process and SAE process are developed to enable a ultrahigh density of 7–9 × 1010 cm−2 QD formation with a feature size of 20–35 nm. The growth mechanism and geometrical properties of the QDs were investigated by scanning electron microscopy and cross-sectional transmission electron microscopy, showing the nanopyramid QD structure with InGaN grown on semipolar {101¯1} planes. The optical characteristics of the nanopyramid QDs were examined by microphotoluminescence measurements. We observed QD emission centered at 488 and 514 nm, depending on the growth temperature employed. These emissions were found to be longer wavelength than those from a planar quantum well structure. This can be attributed to the combined effects of higher indium incorporation along the semipolar plane and a larger InGaN thickness. Furthermore, we also found that the QD emission intensity increases as the number of InGaN layers increases without wavelength shift, indicating a constant growth rate and indium incorporation along the semipolar plane after the formation of the nanopyramid structure. The internal quantum efficiency is estimated to be over 60% by comparing the photoluminescence (PL) intensity of QDs at low temperature and room temperature. PL emission wavelength shows an 11 nm blue shift, while the full width at half maximum decreases from 68 (351 meV) to 56 nm (303 meV) from room temperature to low temperature. By employing BCP lithography and SAE technique, we successfully demonstrated that ultrahigh density, small size InGaN/GaN nanopyramid QDs with visible emission were achieved, which could be a potential active region for QD light-emitting diodes and/or lasers.
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来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
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