半导体制造中的气体输送流体-机械时间尺度

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2023-10-24 DOI:10.1109/TSM.2023.3327067

E. Gonzalez-Juez

{"title":"半导体制造中的气体输送流体-机械时间尺度","authors":"E. Gonzalez-Juez","doi":"10.1109/TSM.2023.3327067","DOIUrl":null,"url":null,"abstract":"Semiconductor manufacturing demands a fast delivery of multiple gases to the tool. Hence this document provides formulas for the fluid-mechanical timescales of this delivery. This is done with a simple but realistic model of a gas-supply system, together with theory and computational-fluid-dynamic (CFD) simulations, and for representative but not comprehensive conditions relevant to etch. This timescale analysis shows that the rate-limiting process is (i) convection in the MFC-manifold tubing or (ii) convection in the tube between the flow splitter and the process chamber. This depends on (a) the lowest MFC sccm in the gas-supply system and (b) the total gas-supply-system sccm. Therefore, speeding up the gas delivery requires enhancing (i) and (ii). Moreover, (i) would become more important in view of a current trend towards smaller MFC sccms in etch. Examples on how to speed up the gas delivery and enhance the mixing are provided. The present analysis can be adapted to other conditions and manufacturing processes.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 1","pages":"38-45"},"PeriodicalIF":2.3000,"publicationDate":"2023-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas-Delivery Fluid-Mechanical Timescales in Semiconductor Manufacturing\",\"authors\":\"E. Gonzalez-Juez\",\"doi\":\"10.1109/TSM.2023.3327067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor manufacturing demands a fast delivery of multiple gases to the tool. Hence this document provides formulas for the fluid-mechanical timescales of this delivery. This is done with a simple but realistic model of a gas-supply system, together with theory and computational-fluid-dynamic (CFD) simulations, and for representative but not comprehensive conditions relevant to etch. This timescale analysis shows that the rate-limiting process is (i) convection in the MFC-manifold tubing or (ii) convection in the tube between the flow splitter and the process chamber. This depends on (a) the lowest MFC sccm in the gas-supply system and (b) the total gas-supply-system sccm. Therefore, speeding up the gas delivery requires enhancing (i) and (ii). Moreover, (i) would become more important in view of a current trend towards smaller MFC sccms in etch. Examples on how to speed up the gas delivery and enhance the mixing are provided. The present analysis can be adapted to other conditions and manufacturing processes.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"37 1\",\"pages\":\"38-45\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10295388/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10295388/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

半导体制造要求向工具快速输送多种气体。因此，本文件提供了这种输送的流体-机械时间尺度公式。这是通过一个简单但现实的气体供应系统模型，结合理论和计算流体力学（CFD）模拟，以及与蚀刻相关的具有代表性但不全面的条件来实现的。这种时间尺度分析表明，限制速率的过程是 (i) MFC 歧管中的对流或 (ii) 分流器和工艺室之间管道中的对流。这取决于 (a) 供气系统中最低的 MFC sccm 和 (b) 供气系统的总 sccm。因此，要加快气体输送，就必须加强(i)和(ii)。此外，鉴于当前蚀刻中 MFC sccms 越来越小的趋势，(i) 将变得更加重要。本文举例说明了如何加快气体输送和加强混合。本分析可适用于其他条件和制造工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Gas-Delivery Fluid-Mechanical Timescales in Semiconductor Manufacturing

Semiconductor manufacturing demands a fast delivery of multiple gases to the tool. Hence this document provides formulas for the fluid-mechanical timescales of this delivery. This is done with a simple but realistic model of a gas-supply system, together with theory and computational-fluid-dynamic (CFD) simulations, and for representative but not comprehensive conditions relevant to etch. This timescale analysis shows that the rate-limiting process is (i) convection in the MFC-manifold tubing or (ii) convection in the tube between the flow splitter and the process chamber. This depends on (a) the lowest MFC sccm in the gas-supply system and (b) the total gas-supply-system sccm. Therefore, speeding up the gas delivery requires enhancing (i) and (ii). Moreover, (i) would become more important in view of a current trend towards smaller MFC sccms in etch. Examples on how to speed up the gas delivery and enhance the mixing are provided. The present analysis can be adapted to other conditions and manufacturing processes.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.