Alyson Spitzig, Jennifer E. Hoffman, Jason D. Hoffman
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引用次数: 0
摘要
大块VO2经历绝缘体到金属的转变(IMT),在340 K时电阻变化高达五个数量级。然而,当VO2作为薄膜沉积在衬底上时,衬底的应变会改变IMT的温度、电阻率和迟滞率。在这里,我们用氧等离子体分子束外延(MBE)在TiO2(001)和Al2O3(0001)衬底上生长了单相VO2超薄膜(厚度小于20 nm)。首先,我们利用臭氧MBE修改了现有的配方,并在TiO2(001)上重现了文献中最好的薄膜,在加热(冷却)时,在TIMT为308 K (296 K)的12 nm厚薄膜中保持了近三个数量级的转变。然后,我们将我们的配方扩展到Al2O3(0001)衬底,在那里我们稳定了12 nm薄的单相VO2薄膜,并在337 K (329 K)加热(冷却)时观察到两个数量级的转变,扩展了在Al2O3(0001)上超薄VO2薄膜的可能生长方法。
Ultrathin VO2 grown with oxygen plasma molecular beam epitaxy on TiO2 (001) and Al2O3 (0001)
Bulk VO2 undergoes an insulator-to-metal transition (IMT) with up to five orders of magnitude change in the resistance at 340 K. However, when VO2 is deposited as a film on a substrate, the strain from the substrate can alter the IMT temperature, resistivity ratio of IMT, and hysteresis. Here, we present single-phase VO2 ultrathin films (thickness less than 20 nm) grown using oxygen plasma molecular beam epitaxy (MBE) on TiO2 (001) and Al2O3 (0001) substrates. First, we modify existing recipes employing ozone MBE and reproduce the best films from literature on TiO2 (001), maintaining an almost three orders of magnitude transition in a 12 nm thick film with TIMT of 308 K (296 K) upon warming (cooling). We then extend our recipe to Al2O3 (0001) substrates where we stabilize a 12 nm thin single-phase VO2 film and observe two orders of magnitude transition at 337 K (329 K) upon warming (cooling), expanding the possible growth methods for ultrathin VO2 films on Al2O3 (0001).
期刊介绍:
Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.