硅酸三钙水泥对角膜细胞增殖的影响及其与血管内皮生长因子水平和受体分型的关系

IF 0.9 4区 材料科学
Zhengwu Peng, Xiaoping Zhou, Guoping Kuang, Zhenghua Li
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引用次数: 0

摘要

本研究分析了硅酸三钙(C3S)水泥和缺氧对人角膜上皮细胞(HCEpiCs)增殖及血管内皮生长因子(VEGF)及其受体(VEGFRs)水平的影响。采用燃烧法制备了纳米c3s,并利用x射线衍射(XRD)、扫描电镜(SEM)和激光粒度分析仪(LPS)对其进行了表征。培养HCEpiCs,分析不同浓度c3s对HCEpiCs增殖的影响。以缺氧或低浓度(0.5 mg/mL, lc - c3s)、中浓度(5 mg/mL, mc - c3s)、高浓度(50 mg/mL, hc - c3s)的c3s处理细胞,同时以正常HCEpiCs为对照(Ctrl组)。采用CCK-8、Annexin V-FITC/PI、荧光定量聚合酶链式反应(fqPCR)、Western blotting (WB)检测细胞增殖、凋亡及靶基因表达情况。结果表明,纳米级c3s具有多种形态,平均粒径(APS)为(231.5±8.3)nm。随着纳米级c3s浓度的增加,HCEpiCs的增殖能力增强(P <0.05), 5 mg/mL时增殖率最高。在对照组基础上,缺氧组细胞增殖率(PR)降低,凋亡率(AR)升高,VEGF、VEGFR-2和VEGFR-3下降,VEGFR-1升高(P <0.05)。在缺氧组基础上,LCC 3s、MC-C 3s、HC-C 3s组细胞pr升高,APs降低,VEGF、VEGFR-2、VEGFR-3升高,VEGFR-1下调(P <0.05)。MC-C 3s组细胞PR升高,AP降低,VEGF、VEGFR-2、VEGFR-3上调,VEGFR-1下调(P <0.05)。此外,HC-C 3s组细胞PR降低,AP升高,VEGF、VEGFR-2和VEGFR-3上调,VEGFR-1降至MC-C 3s组(P <0.05)。因此,c3s促进HCEpiCs的增殖,上调VEGF、VEGFR-2和VEGFR-3,下调VEGFR-1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of Tricalcium Silicate Cement on Corneal Cell Proliferation and Its Relationship with Vascular Endothelial Growth Factor Level and Receptor Typing
This research analyzed the effects of tricalcium silicate (C3S) cement and hypoxia on proliferation of human corneal epithelial cells (HCEpiCs) and the levels of vascular endothelial growth factor (VEGF) and its receptors (VEGFRs). Nanoscale C 3 S was prepared using a combustion method and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and laser particle size (LPS) analyzer. HCEpiCs were cultured, and influences of C 3 S with changed concentrations on proliferation of (HCEpiCs were analyzed. The cells were treated with hypoxia or with low-concentration (0.5 mg/mL, LC-C 3 S), medium-concentration (5 mg/mL, MC-C 3 S), or high-concentration (50 mg/mL, HC-C 3 S) of C 3 S. Meanwhile, normal HCEpiCs were undertaken as controls (Ctrl group). Cell proliferation, apoptosis, and the expression of target genes were detected using CCK-8, Annexin V-FITC/PI, fluorescent quantitative polymerase chain reaction (fqPCR), and Western blotting (WB). The results suggested that nanoscale C 3 S had multiple morphologies and an average particle size (APS) of (231.5±8.3) nm. With increasing nanoscale C 3 S concentration, proliferation of HCEpiCs increased ( P < 0.05), and the highest proliferation was visualized at 5 mg/mL. Based on the conditions in the Ctrl group, the hypoxia group exhibited a decreased proliferation rate (PR), an increased apoptosis rate (AR), downshifted VEGF, VEGFR-2, and VEGFR-3, and elevated VEGFR-1 ( P < 0.05). Based on the hypoxia group, the LCC 3 S, MC-C 3 S, and HC-C 3 S groups presented increased cell PRs, decreased APs, upshifted VEGF, VEGFR-2, and VEGFR-3, and downregulated VEGFR-1 ( P < 0.05). The MC-C 3 S group showed an increased cell PR, a decreased AP, upregulated VEGF, VEGFR-2, and VEGFR-3, and downregulated VEGFR-1 to the LC-C 3 S group ( P < 0.05). Additionally, the HC-C 3 S group had a decreased cell PR, an increased AP, upregulated VEGF, VEGFR-2, and VEGFR-3, and a downshifted VEGFR-1 to the MC-C 3 S group ( P < 0.05). Therefore, C 3 S promoted proliferation of HCEpiCs, upregulated VEGF, VEGFR-2, and VEGFR-3, and downregulated VEGFR-1.
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来源期刊
Science of Advanced Materials
Science of Advanced Materials NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
自引率
11.10%
发文量
98
审稿时长
4.4 months
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