Ar:O2气体比对溅射沉积la2o3掺杂ZnO薄膜结构和光学性能的影响

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
S. R. Pilli, M. Sowjanya, Mohammad Shariq, Y. Altowairqi, D Sabina, Talal M. Althagafi, Wafa Al-Gethami, Aeshah Alasmari, Khairiah Alshehri, Noura E. Alhazmi, Syed Kashif Ali
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引用次数: 0

摘要

摘要:由于其独特的闪烁、磷光、磁性和催化性能,稀土氧化物近年来已成为各种用途中最受欢迎的材料之一。本研究利用射频溅射技术研究了氩气流量变化对在二氧化硅(sio2)衬底上沉积la2o3掺杂氧化锌薄膜(TFs)的影响。FE-SEM分析表明,La 2o3掺杂的ZnO tf具有光滑的表面拓扑结构和纯度。x射线衍射分析显示其为单相六方纤锌矿型结构。用紫外-可见-红外分光光度计研究了ZnO和la2o3掺杂ZnO tf在300 ~ 800 nm波长范围内的光学特性。随着(Ar: o2)气体中氩气和氧气浓度的变化,la2o3掺杂ZnO tf的带隙从2.9 eV变化到3.1 eV。当ZnO和la2o3掺杂的ZnO tf暴露于不同的(Ar: o2)气体流量比时,观察到介电常数、折射率和消光系数等光学常数的变化。在激发波长为330 nm的条件下,对ZnO和la2o3掺杂的ZnO tf进行了光致发光分析。原子力显微镜进一步发现,la2o3的掺杂使材料表面更光滑,晶粒尺寸更小。这项全面的研究为掺杂、气体成分与ZnO tf的光学和结构性质之间的关系提供了有价值的见解。获得的最佳氩气流速的结果为确定la2o3掺杂ZnO TFs的合适沉积条件,特别是其在太阳能热系统中的应用提供了有价值的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films
Abstract Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O 2 gas flow variation on the deposition of La 2 O 3 -doped zinc oxide thin films (TFs) on silicon dioxide (SiO 2 ) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La 2 O 3 -doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La 2 O 3 -doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La 2 O 3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O 2 ) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La 2 O 3 -doped ZnO TFs were exposed to variable (Ar:O 2 ) gas flow ratios. The photoluminescence analysis of ZnO and La 2 O 3 -doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La 2 O 3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La 2 O 3 -doped ZnO TFs, specifically for their application in solar thermal systems.
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来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
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