用于半导体缺陷检测的基于多尺度残留聚合网络的新型图像超分辨率算法

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yang Liu;Lilei Hu;Bin Sun;Can Ma;Jingxuan Shen;Chang Chen
{"title":"用于半导体缺陷检测的基于多尺度残留聚合网络的新型图像超分辨率算法","authors":"Yang Liu;Lilei Hu;Bin Sun;Can Ma;Jingxuan Shen;Chang Chen","doi":"10.1109/TSM.2023.3327767","DOIUrl":null,"url":null,"abstract":"Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2023-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Multiscale Residual Aggregation Network-Based Image Super-Resolution Algorithm for Semiconductor Defect Inspection\",\"authors\":\"Yang Liu;Lilei Hu;Bin Sun;Can Ma;Jingxuan Shen;Chang Chen\",\"doi\":\"10.1109/TSM.2023.3327767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10297122/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10297122/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

单图像超分辨率(SISR)技术已在半导体缺陷检测领域得到广泛应用。增强图像分辨率对提高检测灵敏度和准确性具有重要意义。本研究提出了一种名为交叉卷积残差网络(CCRN)的新型 SISR 算法。CCRN 包括一个交叉卷积模块(CCM),其中包含一个交叉共享机制,可促进不同阶段特征的融合,从而从图像中提取更多信息。此外,还引入了全局残差聚合结构(GRA)。GRA 可捕捉并将从学习每个 CCM 中获取的不同层次的残差特征传输到重建层。实验结果表明,当应用于微流控芯片、CMOS 图像传感器和量子点的光学、扫描电镜和 TEM 图像时,所提出的 SR 算法在视觉和定量指标方面都优于现有的一流 SR 算法。此外,在使用 WM-811K 数据集进行评估时,CCRN 显著提高了缺陷分类和无图案晶片检测的准确性。值得注意的是,局部缺陷检测准确率从 79.00% 提高到 89.00%,分类准确率从 93.69% 提高到 96.06%。这些发现强调了拟议算法在提高半导体缺陷检测和分类准确性方面的潜在应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Multiscale Residual Aggregation Network-Based Image Super-Resolution Algorithm for Semiconductor Defect Inspection
Single-image super-resolution (SISR) techniques have found wide applications in semiconductor defect inspection. Enhancing image resolution to improve inspection sensitivity and accuracy holds great significance. A novel SISR algorithm, called cross-convolutional residual network (CCRN), is proposed in this study. CCRN comprises a cross-convolutional module (CCM), which incorporates a cross-sharing mechanism that facilitates the fusion of features from different stages, enabling the extraction of more information from the image. Moreover, a global residual aggregation structure (GRA) is introduced. GRA captures and transfers different levels of residual features acquired from learning each CCM to the reconstruction layer. Experimental results demonstrate that the proposed SR algorithm outperforms existing state-of-the-art SR algorithms in terms of both visual and quantitative metrics when applied to optical, SEM, and TEM images of microfluidic chips, CMOS image sensors, and quantum dots, respectively. Additionally, CCRN significantly improves the accuracy of defect classification and inspection of unpatterned wafers, as evaluated using the WM-811K dataset. Notably, an increase in local defection testing accuracy from 79.00% to 89.00% and an improvement in classification accuracy from 93.69% to 96.06% are achieved. These findings underscore the potential applications of the proposed algorithm in improving semiconductor defect inspection and classification accuracies.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信