一种简单直接的ofet界面表征方法

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-01 DOI:10.1109/IPFA.2007.4378107

P. Srinivas, S. P. Tiwari, H. N. Raval, R. Ramesh, T. Cahyadi, S. Mhaisalkar, V. Rao

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引用次数: 0

摘要

本文首次成功地将多频跨导技术应用于ofet的界面表征。标准电荷泵送测量用于硅mosfet的MFT技术的验证。该方法在五苯和P3HT基ofet上实现，SiO2为栅极介质。结果表明，两种样品的界面态密度均在1012/cm2/eV范围内。P3HT薄膜还显示有额外的陷阱中心，其响应频率高于100 kHz。因此，我们的结果清楚地表明，MFT技术确实是一种非常有用的技术，用于表征ofet的界面。

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A Simple and Direct Method for Interface Characterization of OFETs

Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the range of 1012/cm2/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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