{"title":"等离子体诱导电荷损伤及其对0.115-/spl mu/m技术可靠性的影响","authors":"E. Li, D. Pachura, L. Duong, S. Prasad, D. Vijay","doi":"10.1109/PPID.2003.1200917","DOIUrl":null,"url":null,"abstract":"Plasma-induced damage on 0.115 /spl mu/m Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Plasma-induced charge damage and its effect on reliability in 0.115-/spl mu/m technology\",\"authors\":\"E. Li, D. Pachura, L. Duong, S. Prasad, D. Vijay\",\"doi\":\"10.1109/PPID.2003.1200917\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Plasma-induced damage on 0.115 /spl mu/m Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200917\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma-induced charge damage and its effect on reliability in 0.115-/spl mu/m technology
Plasma-induced damage on 0.115 /spl mu/m Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.