超结MOSFET正向偏置安全工作区域分析

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856773

B. Zhang, Z. Xu, A.Q. Huang

{"title":"超结MOSFET正向偏置安全工作区域分析","authors":"B. Zhang, Z. Xu, A.Q. Huang","doi":"10.1109/ISPSD.2000.856773","DOIUrl":null,"url":null,"abstract":"In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Analysis of the forward biased safe operating area of the super junction MOSFET\",\"authors\":\"B. Zhang, Z. Xu, A.Q. Huang\",\"doi\":\"10.1109/ISPSD.2000.856773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 19

摘要

本文研究了超结MOSPET(也称为CoolMOS)的正向偏置安全工作区域(FBSOA)。实验获得了600 v CoolMOS晶体管spp20n60s5的FBSOA。通过数值模拟，详细分析了FBSOA的特性和失效机理。本文还研究了电荷不平衡对FBSOA的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of the forward biased safe operating area of the super junction MOSFET

In this paper, the forward biased safe operating area (FBSOA) of the super junction MOSPET (also called CoolMOS) is studied. The FBSOA of a 600-V CoolMOS transistor-SPP20N60S5 is experimentally obtained. The FBSOA characteristic and the FBSOA failure mechanisms are analyzed in detail with the help of numerical simulations. The impact of the charge imbalance on the FBSOA is also studied in this work.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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