{"title":"mosfet亚阈值区域1/f噪声变异性的评估","authors":"H. Tuinhout, A. Z. Duijnhoven","doi":"10.1109/ICMTS.2013.6528151","DOIUrl":null,"url":null,"abstract":"This paper discusses the challenges of characterization of 1/f noise and its variability under weak-inversion operating conditions of MOSFETs. A dedicated test module was designed with a range of MOSFET types with different layout implementations, particularly focusing at the noise behavior of very wide transistors. Through extensive use of a commercial noise characterization system it proved possible to evaluate the variability of 1/f noise in weak-inversion, revealing several interesting and important subtleties of low frequency noise.","PeriodicalId":142589,"journal":{"name":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Evaluation of 1/f noise variability in the subthreshold region of MOSFETs\",\"authors\":\"H. Tuinhout, A. Z. Duijnhoven\",\"doi\":\"10.1109/ICMTS.2013.6528151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the challenges of characterization of 1/f noise and its variability under weak-inversion operating conditions of MOSFETs. A dedicated test module was designed with a range of MOSFET types with different layout implementations, particularly focusing at the noise behavior of very wide transistors. Through extensive use of a commercial noise characterization system it proved possible to evaluate the variability of 1/f noise in weak-inversion, revealing several interesting and important subtleties of low frequency noise.\",\"PeriodicalId\":142589,\"journal\":{\"name\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2013.6528151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2013.6528151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of 1/f noise variability in the subthreshold region of MOSFETs
This paper discusses the challenges of characterization of 1/f noise and its variability under weak-inversion operating conditions of MOSFETs. A dedicated test module was designed with a range of MOSFET types with different layout implementations, particularly focusing at the noise behavior of very wide transistors. Through extensive use of a commercial noise characterization system it proved possible to evaluate the variability of 1/f noise in weak-inversion, revealing several interesting and important subtleties of low frequency noise.
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