FD-SOI 28nm工艺硅厚度监测策略

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106110

A. Cros, F. Monsieur, Y. Carminati, P. Normandon, D. Petit, F. Arnaud, J. Rosa

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引用次数: 0

摘要

采用两种不同的电表征技术对FD-SOI 28nm工艺的硅厚度(Tsi)波动监测进行了研究。第一种是电容式，适用于晶圆片内部变化和批次/晶圆片变化监测。第二种方法是在可寻址晶体管阵列中使用Idsat对Tsi的灵敏度，可以测量几十微米范围内的局部变化。

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Silicon thickness monitoring strategy for FD-SOI 28nm technology

The silicon thickness (Tsi) fluctuation monitoring on FD-SOI 28nm technology process is addressed by 2 different electrical characterization techniques. The first, capacitive, is adapted to within wafer variations and lot/wafer variations monitoring. The second, using the Idsat sensitivity to the Tsi in an addressable transistors array, allows to measure the local variations in the range of few tens of microns.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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