{"title":"NiPt/SnIn/Cu溅射靶组件焊接后的界面微观结构","authors":"Zhichao Meng, M. Wen, Zhi-Quan Liu","doi":"10.1109/ICEPT50128.2020.9201936","DOIUrl":null,"url":null,"abstract":"With the miniaturization of electronic devices, the application of thin film materials in electronic devices is becoming more and more widespread. Sputter coating to prepare film material has attracted attention because of its good film formation quality, high deposition efficiency and controllable thickness. The quality of film material is mostly determined by target material. Generally, the target material is fixed to the back plate by welding or mechanical connection method, to form a target back plate assembly. The target back plate should not only have a reliable mechanical connection, but also have good thermal conductivity to ensure heating dissipation during the sputtering process. In this paper, the NiPt alloy target and Cu backplate is soldered together by Sn/In solder to form the target backplate assembly. The microstructure and morphology of the soldering interface between NiPt target and Cu backplate is investigated. The composition of the formed intermetallic compound (IMC) is analyzed, which is significant for improving the reliability of large-size metal targets backplate and ensuring the quality of the soldering interface.","PeriodicalId":136777,"journal":{"name":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interfacial microstructure of NiPt/SnIn/Cu sputtering target assembly after soldering\",\"authors\":\"Zhichao Meng, M. Wen, Zhi-Quan Liu\",\"doi\":\"10.1109/ICEPT50128.2020.9201936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the miniaturization of electronic devices, the application of thin film materials in electronic devices is becoming more and more widespread. Sputter coating to prepare film material has attracted attention because of its good film formation quality, high deposition efficiency and controllable thickness. The quality of film material is mostly determined by target material. Generally, the target material is fixed to the back plate by welding or mechanical connection method, to form a target back plate assembly. The target back plate should not only have a reliable mechanical connection, but also have good thermal conductivity to ensure heating dissipation during the sputtering process. In this paper, the NiPt alloy target and Cu backplate is soldered together by Sn/In solder to form the target backplate assembly. The microstructure and morphology of the soldering interface between NiPt target and Cu backplate is investigated. The composition of the formed intermetallic compound (IMC) is analyzed, which is significant for improving the reliability of large-size metal targets backplate and ensuring the quality of the soldering interface.\",\"PeriodicalId\":136777,\"journal\":{\"name\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Conference on Electronic Packaging Technology (ICEPT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT50128.2020.9201936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT50128.2020.9201936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interfacial microstructure of NiPt/SnIn/Cu sputtering target assembly after soldering
With the miniaturization of electronic devices, the application of thin film materials in electronic devices is becoming more and more widespread. Sputter coating to prepare film material has attracted attention because of its good film formation quality, high deposition efficiency and controllable thickness. The quality of film material is mostly determined by target material. Generally, the target material is fixed to the back plate by welding or mechanical connection method, to form a target back plate assembly. The target back plate should not only have a reliable mechanical connection, but also have good thermal conductivity to ensure heating dissipation during the sputtering process. In this paper, the NiPt alloy target and Cu backplate is soldered together by Sn/In solder to form the target backplate assembly. The microstructure and morphology of the soldering interface between NiPt target and Cu backplate is investigated. The composition of the formed intermetallic compound (IMC) is analyzed, which is significant for improving the reliability of large-size metal targets backplate and ensuring the quality of the soldering interface.