提高BiCMOS技术中NPN的长脉宽失效电流

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-09-22 DOI:10.1109/IRPS.2016.7574606

Yang Xiu, A. Appaswamy, Zaichen Chen, A. Salman, M. Dissegna, G. Boselli, E. Rosenbaum

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引用次数: 1

摘要

通过测量和TCAD仿真，研究了0.18 μm BiCMOS中NPN结构失效电流与脉宽的关系。由于在该装置中形成电流细丝，因此未观察到所需的“Wunsch-Bell”行为;然而，长脉冲宽度的失效电流会随着布局的改变而增加。

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Improving the long pulse width failure current of NPN in BiCMOS technology

The pulse width dependency of the failure current for NPN structures in a 0.18-μm BiCMOS technology is studied using measurements and TCAD simulation. The desired “Wunsch-Bell” behavior is not observed due to formation of current filaments in this device; however, the failure current for long pulse widths can be increased by layout changes.

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2016 IEEE International Reliability Physics Symposium (IRPS)

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