为超导数字逻辑实现双金属级半damascene互连:超导NbxTi(1-x)N的制备、表征和电学测量

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) Pub Date : 2023-05-01 DOI:10.1109/IITC/MAM57687.2023.10154725

Ankit Pokhrel, Anshul Gupta, Minsoo Kim, J. Soulie, Sujan K. Sarkar, Y. Canvel, Vincent Renaud, B. Kenens, Blake Hodges, Trent Josephsen, Sabine O’Neal, Q. Herr, A. Herr, Z. Tokei

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引用次数: 0

摘要

NbxTi(1-x)N在超导器件中是一种很有前途的替代传统Nb的材料。在这项工作中，使用直接金属蚀刻，半大马士革方法，在IMEC 300毫米中试线上制作了带有金属线和过孔的短回路器件。NbxTi(1-x)N线的单线电阻表明，>95%的器件满足预期电阻，95%的器件漏率< 1E-16 A/ μm。低温测量表明，NbxTi(1-x)N线的转变温度为12.5K，在薄膜的0.5K范围内，临界电流为0.15 mA，在理论最大值的2X范围内。

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Towards Enabling Two Metal Level Semi-Damascene Interconnects for Superconducting Digital Logic: Fabrication, Characterization and Electrical Measurements of Superconducting NbxTi(1-x)N

NbxTi(1-x)N is a promising alternative to replace conventional Nb in superconducting devices. In this work, short loop devices with metal lines and vias were fabricated in IMEC 300-mm pilot line using direct metal etch, semi-damascene approach. Single line resistance of NbxTi(1-x)N wires show that >95% of devices meet the expected resistance of <5000 Ω/μm and leakage measurements show that >95% of devices have low leakage of <1E–16 A/ μm. Low temperature measurements show that the NbxTi(1-x)N wires have transition temperature of 12.5K within 0.5K that of thin film and a critical current of 0.15 mA, within 2X of theoretical maximum.

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来源期刊

2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)

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