{"title":"多栅极分漏式MOSFET磁场传感装置和放大器","authors":"F. Kub, C. S. Scott","doi":"10.1109/IEDM.1992.307414","DOIUrl":null,"url":null,"abstract":"A new split-drain MOSFET magnetic-field sensing device is reported which uses multiple gates to establish a longitudinal electric field in the channel. A relative sensitivity of 185 mA/AT was measured for a double-polysilicon, multiple-gate, split-drain MOSFET. A triple-drain multiple-gate MOSFET device achieved relative sensitivities greater then 10,000 mA/AT. A new amplifier circuit for the multiple-gate, split-drain device achieved an absolute sensitivity of 10 V/T at a 400 nA bias current corresponding to a relative sensitivity of 2.5*10/sup 7/ V/AT. The intrinsic power dissipation of the magnetic amplifier sensor is as small as 8 mu W.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Multiple-gate split-drain MOSFET magnetic-field sensing device and amplifier\",\"authors\":\"F. Kub, C. S. Scott\",\"doi\":\"10.1109/IEDM.1992.307414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new split-drain MOSFET magnetic-field sensing device is reported which uses multiple gates to establish a longitudinal electric field in the channel. A relative sensitivity of 185 mA/AT was measured for a double-polysilicon, multiple-gate, split-drain MOSFET. A triple-drain multiple-gate MOSFET device achieved relative sensitivities greater then 10,000 mA/AT. A new amplifier circuit for the multiple-gate, split-drain device achieved an absolute sensitivity of 10 V/T at a 400 nA bias current corresponding to a relative sensitivity of 2.5*10/sup 7/ V/AT. The intrinsic power dissipation of the magnetic amplifier sensor is as small as 8 mu W.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multiple-gate split-drain MOSFET magnetic-field sensing device and amplifier
A new split-drain MOSFET magnetic-field sensing device is reported which uses multiple gates to establish a longitudinal electric field in the channel. A relative sensitivity of 185 mA/AT was measured for a double-polysilicon, multiple-gate, split-drain MOSFET. A triple-drain multiple-gate MOSFET device achieved relative sensitivities greater then 10,000 mA/AT. A new amplifier circuit for the multiple-gate, split-drain device achieved an absolute sensitivity of 10 V/T at a 400 nA bias current corresponding to a relative sensitivity of 2.5*10/sup 7/ V/AT. The intrinsic power dissipation of the magnetic amplifier sensor is as small as 8 mu W.<>
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