新型电镀后原位快速退火工艺的先进铜互连应用

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854323

M. Chen, H. Shin, R. Cheung, R. Morad, Y. Dordi, S. Rengarajan, S. Tsai

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引用次数: 3

摘要

电镀铜(ECP)的室温自退火行为及其对器件制造的影响导致了在CMP之前稳定铜膜性能的ECP后退火工艺的研究。为了在应用材料公司的Electra/sup TM/ Cu集成ECP系统上实现ECP晶圆的快速热退火和冷却，开发了一种新的原位退火室。本文详细研究了这一过程，包括退火温度、时间和环境对膜片电阻、反射率、显微组织、硬度和CMP抛光速率的影响。本文还介绍了与Electra/sup TM/ Cu ECP系统集成的退火室的扩展可靠性测试的过程重复性结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel post electroplating in-situ rapid annealing process for advanced copper interconnect application

The room-temperature self-annealing behavior of electroplated (ECP) copper and its impact on device manufacturing has led to the investigation of a post ECP anneal process to stabilize copper film properties before CMP. A novel in-situ anneal chamber was developed to allow for rapid thermal annealing and cooling of ECP wafers on Applied Materials' Electra/sup TM/ Cu Integrated ECP System. This paper reports a detailed study of this process, including the impact of anneal temperature, time, and ambient on film sheet resistance, reflectivity, microstructure, hardness, as well as CMP polishing rate. Process repeatability results from an extended reliability test of the anneal chamber integrated with the Electra/sup TM/ Cu ECP System are also presented.

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来源期刊

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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