Zhao-Yu Teng, M. Mo, W. Li, Min-Bing Wong, S. Chou
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HBM and D-CDM breakdown testing were preformed on the latest TMR heads of different resistance. Pspice simulations were conducted for individual TMR heads based on their actual failure voltage at HBM and D-CDM, in an attempt to investigate damage current through TMR barrier, as well as voltage across TMR barrier. Results show that in short transient test-HBM and DCDM, damage current threshold (through TMR barrier) is inversely proportional to TMR resistance, while damaging current density threshold sigmah is a constant in each transient model.
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