P. Du, Jau-Yi Wu, T. Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai-Yu Cheng, E. Lai, S. Lai, H. Lung, Sangbum Kim, M. BrightSky, Yu Zhu, S. Mittal, R. Cheek, S. Raoux, E. Joseph, A. Schrott, Jing Li, C. Lam
{"title":"复位过程中熔化对相变存储器可靠性的影响","authors":"P. Du, Jau-Yi Wu, T. Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai-Yu Cheng, E. Lai, S. Lai, H. Lung, Sangbum Kim, M. BrightSky, Yu Zhu, S. Mittal, R. Cheek, S. Raoux, E. Joseph, A. Schrott, Jing Li, C. Lam","doi":"10.1109/IRPS.2012.6241872","DOIUrl":null,"url":null,"abstract":"Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The impact of melting during reset operation on the reliability of phase change memory\",\"authors\":\"P. Du, Jau-Yi Wu, T. Hsu, Ming-Hsiu Lee, Tien-Yen Wang, Huai-Yu Cheng, E. Lai, S. Lai, H. Lung, Sangbum Kim, M. BrightSky, Yu Zhu, S. Mittal, R. Cheek, S. Raoux, E. Joseph, A. Schrott, Jing Li, C. Lam\",\"doi\":\"10.1109/IRPS.2012.6241872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The impact of melting during reset operation on the reliability of phase change memory
Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced electromigration and phase segregation are observed. For the first time, the RESET melting healing effect is proposed to partially repair the SET induced damage and further extend the endurance. This concept can be easily implemented by accordingly designing the control circuits.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
