{"title":"in /sub 0.52/Al/sub 0.48/As/ in /sub 0.53/Ga/sub 0.47/As HEMT中通道电子的二维数值模拟","authors":"X.H. Zhang, Y.F. Yang, Z.G. Wang","doi":"10.1109/HKEDM.1997.642345","DOIUrl":null,"url":null,"abstract":"A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of the InAlAs/InGaAs HEMT are discussed.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Two-dimensional numerical simulation of the channel electron in an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT\",\"authors\":\"X.H. Zhang, Y.F. Yang, Z.G. Wang\",\"doi\":\"10.1109/HKEDM.1997.642345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of the InAlAs/InGaAs HEMT are discussed.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional numerical simulation of the channel electron in an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT
A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT. According to the model, the two-dimensional distributions of electron density and transverse electric field in the channel of the InAlAs/InGaAs HEMT are discussed.
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