A. Vais, A. Alian, L. Nyns, J. Franco, S. Sioncke, V. Putcha, H. Yu, Y. Mols, R. Rooyackers, D. Lin, J. Maes, Q. Xie, M. Givens, F. Tang, X. Jiang, A. Mocuta, N. Collaert, K. De Meyer, A. Thean
{"title":"使用改进的表面制备和新的界面层，记录了In0.53Ga0.47As MOS器件的迁移率(μeff ~ 3100 cm2/V-s)和可靠性性能(Vov ~ 0.5V, 10年运行)","authors":"A. Vais, A. Alian, L. Nyns, J. Franco, S. Sioncke, V. Putcha, H. Yu, Y. Mols, R. Rooyackers, D. Lin, J. Maes, Q. Xie, M. Givens, F. Tang, X. Jiang, A. Mocuta, N. Collaert, K. De Meyer, A. Thean","doi":"10.1109/VLSIT.2016.7573410","DOIUrl":null,"url":null,"abstract":"In<sub>0.53</sub>Ga<sub>0.47</sub>As quantum-well (QW) MOSFETs with a novel interfacial layer(IL)/high-k stack on an improved interface were fabricated. Excellent device characteristics (SS~72mV/dec, I<sub>on</sub>/I<sub>off</sub>>10<sup>6</sup> at V<sub>ds</sub>=0.5V, DIBL~26mV/v for a device at EOT~1.25nm) were obtained. In addition, EOT was scaled down to 1.0 nm without a significant degradation in electrical properties. The extracted field-effect mobility (peak μ<sub>eff</sub> ~3100 cm<sup>2</sup>/V-s for EOT~1.25nm and μ<sub>eff</sub> ~ 2400 cm<sup>2</sup>/V-s for EOT~1.0nm) is the highest split C-V mobility reported for surface channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs at such small EOT. We demonstrate a record reliability performance using the new IL with an overdrive voltage, V<sub>ov</sub>~0.5V for a 10 year operation (with maximum ΔV<sub>th</sub>=30mV) at EOT~1.25nm. We attribute this performance enhancement in mobility to reduced surface roughness (extremely smooth surface) and remote phonon scattering (due to IL), and improvement in reliability to enhanced energy misalignment between defect bands in high-k and charge carriers in the semi-conductor respectively.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer\",\"authors\":\"A. Vais, A. Alian, L. Nyns, J. Franco, S. Sioncke, V. Putcha, H. Yu, Y. Mols, R. Rooyackers, D. Lin, J. Maes, Q. Xie, M. Givens, F. Tang, X. Jiang, A. Mocuta, N. Collaert, K. De Meyer, A. Thean\",\"doi\":\"10.1109/VLSIT.2016.7573410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In<sub>0.53</sub>Ga<sub>0.47</sub>As quantum-well (QW) MOSFETs with a novel interfacial layer(IL)/high-k stack on an improved interface were fabricated. Excellent device characteristics (SS~72mV/dec, I<sub>on</sub>/I<sub>off</sub>>10<sup>6</sup> at V<sub>ds</sub>=0.5V, DIBL~26mV/v for a device at EOT~1.25nm) were obtained. In addition, EOT was scaled down to 1.0 nm without a significant degradation in electrical properties. The extracted field-effect mobility (peak μ<sub>eff</sub> ~3100 cm<sup>2</sup>/V-s for EOT~1.25nm and μ<sub>eff</sub> ~ 2400 cm<sup>2</sup>/V-s for EOT~1.0nm) is the highest split C-V mobility reported for surface channel In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs at such small EOT. We demonstrate a record reliability performance using the new IL with an overdrive voltage, V<sub>ov</sub>~0.5V for a 10 year operation (with maximum ΔV<sub>th</sub>=30mV) at EOT~1.25nm. We attribute this performance enhancement in mobility to reduced surface roughness (extremely smooth surface) and remote phonon scattering (due to IL), and improvement in reliability to enhanced energy misalignment between defect bands in high-k and charge carriers in the semi-conductor respectively.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Record mobility (μeff ∼3100 cm2/V-s) and reliability performance (Vov∼0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
In0.53Ga0.47As quantum-well (QW) MOSFETs with a novel interfacial layer(IL)/high-k stack on an improved interface were fabricated. Excellent device characteristics (SS~72mV/dec, Ion/Ioff>106 at Vds=0.5V, DIBL~26mV/v for a device at EOT~1.25nm) were obtained. In addition, EOT was scaled down to 1.0 nm without a significant degradation in electrical properties. The extracted field-effect mobility (peak μeff ~3100 cm2/V-s for EOT~1.25nm and μeff ~ 2400 cm2/V-s for EOT~1.0nm) is the highest split C-V mobility reported for surface channel In0.53Ga0.47As MOSFETs at such small EOT. We demonstrate a record reliability performance using the new IL with an overdrive voltage, Vov~0.5V for a 10 year operation (with maximum ΔVth=30mV) at EOT~1.25nm. We attribute this performance enhancement in mobility to reduced surface roughness (extremely smooth surface) and remote phonon scattering (due to IL), and improvement in reliability to enhanced energy misalignment between defect bands in high-k and charge carriers in the semi-conductor respectively.
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