MEMS用硅梁的纳米弯曲测试

T. Namazu, Y. Isono, T. Tanaka
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引用次数: 33

摘要

利用原子力显微镜(AFM)对单晶硅(Si)梁进行了纳米尺度的弯曲测试。采用原子力显微镜场增强阳极氧化和各向异性湿法刻蚀技术,在硅薄膜上制备了宽度为200 ~ 800 nm、厚度为255 nm的纳米尺度硅光束。采用超精密硬度计和划痕计对微、毫米尺度梁进行了弯曲试验。对硅梁在纳米尺度上的力学性能与在微米和毫米尺度上的力学性能进行了比较。为了揭示尺寸对弯曲强度的影响,对断口进行了扫描电镜观察。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nano-scale bending test of Si beam for MEMS
We carried out a nanometer scale bending test for a single crystal silicon (Si) beam using an atomic force microscope (AFM). Nanometer scale Si beams with widths from 200 nm to 800 nm and a thickness of 255 nm were fabricated on an Si diaphragm by means of the field-enhanced anodization using AFM and the anisotropic wet etching. Bending tests for a micro- and millimeter scale beam were also carried out using an ultra-precision hardness tester and scratch tester, respectively. The mechanical property of Si beams on a nanometer scale was compared with that measured on a micro- and millimeter scale. SEM observations of the fracture surface were performed in order to reveal the size effect on the bending strength.
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