{"title":"块体和SOI CMOS技术在DSP处理器电路实现中的比较","authors":"","doi":"10.1109/ICM.2001.997499","DOIUrl":null,"url":null,"abstract":"Silicon-on-insulator (SOI) CMOS technologies are very attractive options for implementing high-speed digital integrated circuits for low-power applications. This paper presents the layout migration of a DSP processor chip from a 0.6 /spl mu/m bulk CMOS to a 0.5 /spl mu/m SOI CMOS technology. The layout migration and verification are described and the two CMOS designs are compared using two main criteria: circuit speed and average power consumption. For nominal supply voltages, the simulations suggest that the SOI circuit can operate at a speed of 98 MHz which is 51 % higher than that of the original (65 MHz). The average power consumption is 35 % lower in the SOI circuit by using 3.3 V and 35 MHz for both SOI and bulk CMOS designs.","PeriodicalId":360389,"journal":{"name":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Comparison of bulk and SOI CMOS technologies in a DSP processor circuit implementation\",\"authors\":\"\",\"doi\":\"10.1109/ICM.2001.997499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon-on-insulator (SOI) CMOS technologies are very attractive options for implementing high-speed digital integrated circuits for low-power applications. This paper presents the layout migration of a DSP processor chip from a 0.6 /spl mu/m bulk CMOS to a 0.5 /spl mu/m SOI CMOS technology. The layout migration and verification are described and the two CMOS designs are compared using two main criteria: circuit speed and average power consumption. For nominal supply voltages, the simulations suggest that the SOI circuit can operate at a speed of 98 MHz which is 51 % higher than that of the original (65 MHz). The average power consumption is 35 % lower in the SOI circuit by using 3.3 V and 35 MHz for both SOI and bulk CMOS designs.\",\"PeriodicalId\":360389,\"journal\":{\"name\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2001.997499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2001.997499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
摘要
绝缘体上硅(SOI) CMOS技术是实现低功耗应用的高速数字集成电路的非常有吸引力的选择。本文介绍了DSP处理器芯片从0.6 /spl μ m批量CMOS技术向0.5 /spl μ m SOI CMOS技术的布局迁移。描述了布局迁移和验证,并使用电路速度和平均功耗两个主要标准对两种CMOS设计进行了比较。对于标称电源电压,仿真表明SOI电路可以在98 MHz的速度下工作,比原来的65 MHz高51%。在SOI和批量CMOS设计中使用3.3 V和35 MHz, SOI电路的平均功耗降低了35%。
Comparison of bulk and SOI CMOS technologies in a DSP processor circuit implementation
Silicon-on-insulator (SOI) CMOS technologies are very attractive options for implementing high-speed digital integrated circuits for low-power applications. This paper presents the layout migration of a DSP processor chip from a 0.6 /spl mu/m bulk CMOS to a 0.5 /spl mu/m SOI CMOS technology. The layout migration and verification are described and the two CMOS designs are compared using two main criteria: circuit speed and average power consumption. For nominal supply voltages, the simulations suggest that the SOI circuit can operate at a speed of 98 MHz which is 51 % higher than that of the original (65 MHz). The average power consumption is 35 % lower in the SOI circuit by using 3.3 V and 35 MHz for both SOI and bulk CMOS designs.