超薄SOI和超薄栅氧化mosfet的性能和可靠性问题

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499349

A. Toriumi, J. Koga, H. Satake, A. Ohata

{"title":"超薄SOI和超薄栅氧化mosfet的性能和可靠性问题","authors":"A. Toriumi, J. Koga, H. Satake, A. Ohata","doi":"10.1109/IEDM.1995.499349","DOIUrl":null,"url":null,"abstract":"Inversion layer mobility in thin SOI MOSFETs has been investigated from the viewpoint of the SOI thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin SiO/sup 2/ regime.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs\",\"authors\":\"A. Toriumi, J. Koga, H. Satake, A. Ohata\",\"doi\":\"10.1109/IEDM.1995.499349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Inversion layer mobility in thin SOI MOSFETs has been investigated from the viewpoint of the SOI thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin SiO/sup 2/ regime.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 33

摘要

从SOI厚度对器件性能影响的角度研究了SOI薄膜mosfet的反转层迁移率。接下来，研究了Qbd、Vgt、Dit和SILC等薄氧化物的性能与氧化物厚度的关系。结果表明，在超薄SiO/sup /状态下，有一个小窗口可以实现高可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Performance and reliability concerns of ultra-thin SOI and ultra-thin gate oxide MOSFETs

Inversion layer mobility in thin SOI MOSFETs has been investigated from the viewpoint of the SOI thickness effects on device performance. Next, thin oxide properties such as Qbd, Vgt, Dit, and SILC have been studied as a function of oxide thickness. It is demonstrated that there is a small window for high reliability in ultra-thin SiO/sup 2/ regime.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of International Electron Devices Meeting

自引率

0.00%

发文量