铜双大马士革一体化采用有机低k材料:建筑结构比较

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854332

Y. Morand, M. Assous, P. Berruyer, M. Cochet, O. Demolliens, M. Fayolle, D. Louis, G. Passemard, A. Roman, C. Verove, Y. Trouiller

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引用次数: 3

摘要

本文提出了铜与纯有机低k材料(SiLK/sup TM/， Dow Chemical Co.， k=2.8)的三种集成方案。我们将比较两种沟槽优先结构，导致自对齐或非自对齐结构，以及更传统的自对齐“Via first at Via Level”结构。通过与二氧化硅的结果比较，讨论了自对准结构的局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Copper dual damascene integration using organic low k material: construction architecture comparison

This paper presents three integration schemes of copper with a pure organic low k material (SiLK/sup TM/, Dow Chemical Co., k=2.8). We will compare two trench first architectures, leading to a self or not self aligned structure, with the more conventional self aligned "Via First at Via Level" structure. The limitations of the self aligned structures are discussed by comparison with results obtained with SiO2.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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