Experimental Extraction of Body Bias Dependence of Low Frequency Noise in sub-micron MOSFETs from Subthreshold to Moderate Inversion Regime

In this study, we investigate low frequency noise under the reverse body bias conditions from subthreshold to moderate inversion regime with 1/f noise measurement for small-area conventional nMOSFETs. The reverse body bias is not influenced on coulomb scattering process, even though the depletion capacitance was influenced by body bias. Furthermore, gate-to-bulk coupling was reduced flat-band fluctuations. These results suggest that reverse body bias is applicable to the low power and high signal-to-noise ratio for low current operation.