利用量子阱混合制备III-V型CMOS光子平台绝缘子片上的多带隙

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880518

Misa Kuramochi, M. Takenaka, Y. Ikku, S. Takagi

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引用次数: 1

摘要

本文研究了在III-V型CMOS光子学平台上利用量子阱混合制备多带隙III-V型绝缘子(III-V- oi)晶圆的工艺。我们成功地在III-V-OI晶圆上通过40 keV能量的P注入实现了大约50 nm的光致发光峰波长偏移。

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Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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