低温铜脱氧

2005 13th International Conference on Advanced Thermal Processing of Semiconductors Pub Date : 2005-10-04 DOI:10.1109/RTP.2005.1613703

K. Funk, A. v Zutphen, E. Granneman

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引用次数: 0

摘要

研究了ECD铜的沉积后退火步骤和沉积前退火步骤对铜种子的影响。与形成气体相比，可以证明少量乙醇的加入可以非常有效地减少表面和晶界氧化，并有利于电学参数。介绍了还原降至100℃对Cu种子的影响及其对ECD Cu生长的影响

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Low temperature copper de-oxidation

The impact of a post deposition annealing step of ECD copper and of a predeposition annealing step on the Cu seed has been investigated. Compared to forming gas it can be demonstrated that the addition of a small amount of ethanol can very effectively reduce the surface and grain boundary oxidation with benefits for the electrical parameters. The impact of a de-oxidation step down to 100degC on the Cu seed and its consequences for the ECD Cu growth are presented

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2005 13th International Conference on Advanced Thermal Processing of Semiconductors

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