用湿法清洗工艺直接结合GaN和Si衬底

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598359

S. Fukumoto, T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, M. Hayase, E. Higurashi

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引用次数: 0

摘要

采用常压条件下由H2SO4/H2O2和NH3/H2O2混合物组成的顺序湿法处理，将氮化镓(GaN)衬底直接与硅衬底结合。经300℃退火处理后，结合基板的结合强度可达6.98 MPa。本研究有助于gan集成器件的发展。

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Direct bonding of GaN and Si substrates using wet cleaning processes

Gallium nitride (GaN) substrate was directly bonded with silicon substrate using a sequential wet treatment consisting of H2SO4/H2O2 and NH3/H2O2 mixtures under atmospheric conditions. The bonding strength of the bonded substrates annealed at 300 °C reached up to 6.98 MPa. This study contributes to the development for GaN-based integrated devices.

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来源期刊

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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