H. Matsuyama, M. Shiozu, T. Kouno, T. Suzuki, H. Ehara, S. Otsuka, T. Hosoda, T. Nakamura, Y. Mizushima, M. Miyajima, K. Shono
{"title":"铜互连孔内应力诱导空化的新退化现象","authors":"H. Matsuyama, M. Shiozu, T. Kouno, T. Suzuki, H. Ehara, S. Otsuka, T. Hosoda, T. Nakamura, Y. Mizushima, M. Miyajima, K. Shono","doi":"10.1109/RELPHY.2007.369989","DOIUrl":null,"url":null,"abstract":"Stress induced voiding inside vias has been investigated in detail using three different kinds of test patterns. Resistance increase which is caused by voiding inside via has been seen larger in \"extrusion pattern\" than in \"wide pattern\". The resistance shift depends upon the length of the narrow pattern within the \"extrusion pattern\". Our new finding is that resistance shift through 10Khour is dominated by the \"body metal area\". These phenomena can be explained with the effect of vacancy diffusion through the path of the copper and barrier metal side interface.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"50 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects\",\"authors\":\"H. Matsuyama, M. Shiozu, T. Kouno, T. Suzuki, H. Ehara, S. Otsuka, T. Hosoda, T. Nakamura, Y. Mizushima, M. Miyajima, K. Shono\",\"doi\":\"10.1109/RELPHY.2007.369989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stress induced voiding inside vias has been investigated in detail using three different kinds of test patterns. Resistance increase which is caused by voiding inside via has been seen larger in \\\"extrusion pattern\\\" than in \\\"wide pattern\\\". The resistance shift depends upon the length of the narrow pattern within the \\\"extrusion pattern\\\". Our new finding is that resistance shift through 10Khour is dominated by the \\\"body metal area\\\". These phenomena can be explained with the effect of vacancy diffusion through the path of the copper and barrier metal side interface.\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"50 6\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects
Stress induced voiding inside vias has been investigated in detail using three different kinds of test patterns. Resistance increase which is caused by voiding inside via has been seen larger in "extrusion pattern" than in "wide pattern". The resistance shift depends upon the length of the narrow pattern within the "extrusion pattern". Our new finding is that resistance shift through 10Khour is dominated by the "body metal area". These phenomena can be explained with the effect of vacancy diffusion through the path of the copper and barrier metal side interface.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
