利用硅化铜地层进行NH3等离子体表面处理以提高EM/SM性能

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241895

W. Baek, Naser Chowdhury, Lan Loi, Hyeon-Seag Kim, Sungjin Kim, A. delRosario, E. Adem, B. Tracy, J. Pak

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引用次数: 1

摘要

为了改善NH3等离子体表面的电迁移(EM)和应力迁移(SM)，研究了利用硅化铜形成NH3等离子体表面预清洁处理的优化方法。NH3等离子体处理去除了Cu氧化物，但也导致Cu/capping层界面处的硅化铜减少。尽管铜氧化物被去除，但由于硅化铜的还原，EM/SM被观察到降解。采用NH3等离子体处理提高EM/SM，关键是在界面处恢复硅化铜。

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Optimization of NH3 plasma surface treatment using Cu silicide formation for EM/SM improvement

Authors investigated optimization of NH3 plasma surface pre-clean treatment using Cu silicide formation in order to improve electromigration (EM) and stressmigration (SM). NH3 plasma treatment removed Cu oxide but also led to reduced Cu silicide at the Cu/capping layer interface. Despite Cu oxide removal, EM/SM was observed to degrade due to the reduction of Cu silicide. It was critical to restore Cu silicide at the interface when employing NH3 plasma treatment to improve EM/SM.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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