在3D RESURF连接处注入少量载流子

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856806

F. Udrea, A. Popescu, R. Ng, G. Amaratunga

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引用次数: 8

摘要

在本文中，我们报告了一类新的半导体器件，称为三维器件，基于应用的概念，在第三维。我们首次展示了基于纯三维导通/阻断操作的器件，其中三维结在电压阻断模式下增强击穿能力，并在导通状态下提供电导率调制。本文还简要讨论了提高击穿性能的理想衬底。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Minority carrier injection across the 3D RESURF junction

In this paper we report a novel class of semiconductor devices termed 3D devices, based on the application of the RESURF concept to the the third dimension. For the first time we demonstrate devices based on pure three-dimensional on-state/blocking operation with the third-dimension junction acting to enhance the breakdown capability in the voltage blocking mode and provide conductivity modulation in the on-state. A brief discussion of the ideal substrate to enhance breakdown performance is also given.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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