配电网计量与相关解耦封装技术评价

N. Fediakine, Hong Shi
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引用次数: 2

摘要

FPGA输入/输出(I/O)电路的配电网络(PDN)的适当频率行为设计提高了性能,并且能够承受特定频率带宽下应用的同步开关噪声(SSN)。本文提出了一种PDN评估和建模方法,研究了不同类型封装的封装上去耦电容(OPD)为10 nF(芯片),嵌入式封装上去耦电容(EPD)为10 nF(薄膜)和100 nF(芯片)的评估方法。本文设计并总结了300khz - 6ghz范围内各种封装的PDN工作模型。直接测量芯片PDN阻抗是非常复杂的,因为它需要在很小的区域内应用宽带微探头。相反,由于FPGA中SSN的电源压缩(PSC)测量用于从硅侧查看阻抗。该方法与从球侧间接测量PDN的方法进行了比较。第二种方法需要标准的1毫米微探头和VNA,然后进行数据处理和等效电路重建。这种非常精细的技术清楚地描述了一个峰值PDN(既不是OPD也不是EPD),但需要额外的调整来获得OPD(或EPD)封装的正确峰值位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluations of package technologies for power distribution network decoupling by measurement and correlation
A design of the proper frequency behavior of a power distribution network (PDN) of input/output (I/O) circuitry of an FPGA enhances performance and is able to withstand synchronous switching noise (SSN) for applications in specific frequency bandwidths. A methodology of PDN evaluation and modeling is presented in this paper, with different types of packages having on-package decoupling capacitance (OPD) of 10 nF (chip), and embedded on-package decoupling capacitances (EPD) of 10 nF (film), and 100 nF (chip) studied for evaluation. The working models of PDN in the 300 kHz-6 GHz range for all packages are designed and summarized in the paper. Direct measurement of chip PDN impedance is quite complicated because it requires applying wideband microprobes to a very small area. Instead, a power supply compression (PSC) measurement due to SSN in FPGA is used to view the impedance from the silicon side. This method is compared with indirect measurement of PDN done from the ball side. A second method requires standard 1 mm microprobes and VNA with the following processing of data and equivalent circuit reconstruction. This very elaborate technique clearly describes one peak PDN (neither OPD nor EPD), but requires additional tweaking to get the correct peak positions of packages with OPD (or EPD).
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