R. Bashir, J. De Santis, D. Chen, F. Hébert, A. Ramde, P. Maghsoudnia, H. You, P. Meng, F. Moraveji, R. Razouk
{"title":"用于高精度和高频模拟电路的40伏硅互补双极技术","authors":"R. Bashir, J. De Santis, D. Chen, F. Hébert, A. Ramde, P. Maghsoudnia, H. You, P. Meng, F. Moraveji, R. Razouk","doi":"10.1109/BIPOL.1994.587900","DOIUrl":null,"url":null,"abstract":"A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BV/sub ceo/ of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BV/sub ceo//spl times/f/sub t//h/sub fe//spl times/Va figures of merit in excess of 135 GHz/spl middot/V/20,000 V for NPN and 130 GHz/spl middot/V/6,500 V for PNP.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits\",\"authors\":\"R. Bashir, J. De Santis, D. Chen, F. Hébert, A. Ramde, P. Maghsoudnia, H. You, P. Meng, F. Moraveji, R. Razouk\",\"doi\":\"10.1109/BIPOL.1994.587900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BV/sub ceo/ of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BV/sub ceo//spl times/f/sub t//h/sub fe//spl times/Va figures of merit in excess of 135 GHz/spl middot/V/20,000 V for NPN and 130 GHz/spl middot/V/6,500 V for PNP.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"204 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits
A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BV/sub ceo/ of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BV/sub ceo//spl times/f/sub t//h/sub fe//spl times/Va figures of merit in excess of 135 GHz/spl middot/V/20,000 V for NPN and 130 GHz/spl middot/V/6,500 V for PNP.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
